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000851649 1001_ $$0P:(DE-Juel1)156365$$aZhang, Hehe$$b0
000851649 245__ $$aUnderstanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti/Pt Nanosized ReRAM Devices
000851649 260__ $$aWashington, DC$$bSoc.$$c2018
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000851649 520__ $$aRedox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications beyond von Neumann computing. The prevailing, so-called, counter-eight-wise (c8w) polarity of the switching hysteresis in filamentary-type valence change mechanism devices originates from a temperature- and field-controlled drift-diffusion process of mobile ions, predominantly oxygen vacancies in the switching oxide. Recently, a bipolar resistive switching (BRS) process with opposite polarity, so-called, eight-wise (8w) switching, has been reported that, especially for TiO2 cells, is still not completely understood. Here, we report on nanosized (<0.01 μm2) asymmetric memristive cells from 3 to 6 nm thick TiO2 films by atomic layer deposition, which reveal a coexistence of c8w and 8w switching in the same cell. As important characteristics for the studied Pt/TiO2/Ti/Pt devices, the resistance states of both modes are nonvolatile and share one common state; i.e., the high-resistance state of the c8w mode equals the low-resistance state of the 8w-mode. A transition between the opposite hysteresis loops is possible by voltage control. Specifically, 8w BRS in the TiO2 cells is a self-limited low-energy nonvolatile switching process. Additionally, the 8w reset process enables the programming of multilevel high-resistance states. Combining the experimental results with data from simulation studies allows to propose a model, which explains 8w BRS by an oxygen transfer process across the Pt/TiO2 Schottky interface at the position of the c8w filament. Therefore, the coexistence of c8w and 8w BRS in the nanoscale asymmetric Pt/TiO2/Ti/Pt cells is understood from a competition between drift/diffusion of oxygen vacancies in the oxide layer and an oxygen exchange reaction across the Pt/TiO2 interface.
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000851649 7001_ $$0P:(DE-HGF)0$$aYoo, Sijung$$b1
000851649 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b2
000851649 7001_ $$0P:(DE-Juel1)165703$$aFunck, Carsten$$b3
000851649 7001_ $$0P:(DE-Juel1)173924$$aCüppers, Felix$$b4
000851649 7001_ $$0P:(DE-HGF)0$$aWouters, Dirk J.$$b5
000851649 7001_ $$00000-0002-6254-9758$$aHwang, Cheol Seong$$b6
000851649 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b7
000851649 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b8$$eCorresponding author
000851649 773__ $$0PERI:(DE-600)2467494-1$$a10.1021/acsami.8b09068$$gVol. 10, no. 35, p. 29766 - 29778$$n35$$p29766 - 29778$$tACS applied materials & interfaces$$v10$$x1944-8252$$y2018
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