% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Funck:851660,
      author       = {Funck, Carsten and Marchewka, Astrid and Bäumer, Christoph
                      and Schmidt, Peter C. and Müller, Phillip and Dittmann,
                      Regina and Martin, Manfred and Waser, R. and Menzel,
                      Stephan},
      title        = {{A} {T}heoretical and {E}xperimental {V}iew on the
                      {T}emperature {D}ependence of the {E}lectronic {C}onduction
                      through a {S}chottky {B}arrier in a {R}esistively
                      {S}witching {S}r{T}i{O} 3 -{B}ased {M}emory {C}ell},
      journal      = {Advanced electronic materials},
      volume       = {4},
      number       = {7},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2018-05210},
      pages        = {1800062 -},
      year         = {2018},
      abstract     = {Metal–semiconductor Schottky interfaces are of high
                      interest in many fields of semiconductor physics. One type
                      of electronic devices based on Schottky contacts are
                      resistive switching cells. The mostly applied analytical
                      models are insufficient to describe all Schottky contact
                      systems, which further impedes finding the correct
                      conduction mechanism and may lead to physical
                      misunderstandings. In this work, the electron transport
                      properties of the resistively switching SrTiO3/Pt interface
                      model system are investigated using a combination of
                      experimental and theoretical methods.
                      Temperature‐dependent I–V curves are measured and
                      analyzed using an analytical approach, an atomistic approach
                      based on density functional theory and the nonequilibrium
                      Green's function formalism, and a continuum modeling
                      approach. The findings suggest two different conduction
                      mechanisms. Instead of a current transport over the barrier,
                      as in the case of Schottky emission theory, the simulations
                      show that tunneling through the Schottky barrier dominates.
                      In the low voltage range, only thermally excited electrons
                      can tunnel into the conduction band. For higher voltages,
                      the SrTiO3 conduction band and the Fermi level at the
                      injecting Pt‐electrode are aligned, allowing also
                      electrons at the Fermi‐edge to tunnel. Consequently, the
                      temperature dependence changes, leading to a crossing of the
                      I–V curves at different temperatures.},
      cin          = {PGI-7 / JARA-FIT / JARA-HPC},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      $I:(DE-82)080012_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / Modelling the Valency Change Memory Effect in
                      Resistive Switching Random Access Memory (RRAM)
                      $(jpgi70_20120501)$},
      pid          = {G:(DE-HGF)POF3-521 / $G:(DE-Juel1)jpgi70_20120501$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000437828700005},
      doi          = {10.1002/aelm.201800062},
      url          = {https://juser.fz-juelich.de/record/851660},
}