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@ARTICLE{Rosrio:851661,
      author       = {Rosário, Carlos M. M. and Thöner, Bo and Schönhals,
                      Alexander and Menzel, Stephan and Wuttig, Matthias and
                      Waser, R. and Sobolev, Nikolai A. and Wouters, Dirk J.},
      title        = {{C}orrelation between the transport mechanisms in
                      conductive filaments inside {T}a 2 {O} 5 -based resistive
                      switching devices and in substoichiometric {T}a{O} x thin
                      films},
      journal      = {Applied physics letters},
      volume       = {112},
      number       = {21},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2018-05211},
      pages        = {213504 -},
      year         = {2018},
      abstract     = {Conductive filaments play a key role in redox-based
                      resistive random access memory (ReRAM) devices based on the
                      valence change mechanism, where the change of the resistance
                      is ascribed to the modulation of the oxygen content in a
                      local region of these conductive filaments. However, a deep
                      understanding of the filaments' composition and structure is
                      still a matter of debate. We approached the problem by
                      comparing the electronic transport, at temperatures from
                      300 K down to 2 K, in the filaments and in TaOx films
                      exhibiting a substoichiometric oxygen content. The filaments
                      were created in Ta (15 nm)/Ta2O5 (5 nm)/Pt crossbar
                      ReRAM structures. In the TaOx thin films with various oxygen
                      contents, the in-plane transport was studied. There is a
                      close similarity between the electrical properties of the
                      conductive filaments in the ReRAM devices and of the TaOx
                      films with x ∼ 1, evidencing also no dimensionality
                      difference for the electrical transport. More specifically,
                      for both systems there are two different conduction
                      processes: one in the higher temperature range (from 50 K
                      up to ∼300 K), where the conductivity follows a
                      T⎯⎯⎯√  dependence, and one at lower temperatures
                      (<50 K), where the conductivity follows the
                      exp(−1/T⎯⎯⎯√)  dependence. This suggests a
                      strong similarity between the material composition and
                      structure of the filaments and those of the
                      substoichiometric TaOx films. We also discuss the
                      temperature dependence of the conductivity in the framework
                      of possible transport mechanisms, mainly of those normally
                      observed for granular metals.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000433140900034},
      doi          = {10.1063/1.5024504},
      url          = {https://juser.fz-juelich.de/record/851661},
}