| 001 | 851661 | ||
| 005 | 20210129234955.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1063/1.5024504 |
| 024 | 7 | _ | |2 ISSN |a 0003-6951 |
| 024 | 7 | _ | |2 ISSN |a 1077-3118 |
| 024 | 7 | _ | |2 Handle |a 2128/19663 |
| 024 | 7 | _ | |2 WOS |a WOS:000433140900034 |
| 037 | _ | _ | |a FZJ-2018-05211 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |0 0000-0002-3285-2027 |a Rosário, Carlos M. M. |b 0 |e Corresponding author |
| 245 | _ | _ | |a Correlation between the transport mechanisms in conductive filaments inside Ta 2 O 5 -based resistive switching devices and in substoichiometric TaO x thin films |
| 260 | _ | _ | |a Melville, NY |b American Inst. of Physics |c 2018 |
| 336 | 7 | _ | |2 DRIVER |a article |
| 336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |b journal |m journal |s 1547050340_3111 |
| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
| 336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
| 336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
| 520 | _ | _ | |a Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content in a local region of these conductive filaments. However, a deep understanding of the filaments' composition and structure is still a matter of debate. We approached the problem by comparing the electronic transport, at temperatures from 300 K down to 2 K, in the filaments and in TaOx films exhibiting a substoichiometric oxygen content. The filaments were created in Ta (15 nm)/Ta2O5 (5 nm)/Pt crossbar ReRAM structures. In the TaOx thin films with various oxygen contents, the in-plane transport was studied. There is a close similarity between the electrical properties of the conductive filaments in the ReRAM devices and of the TaOx films with x ∼ 1, evidencing also no dimensionality difference for the electrical transport. More specifically, for both systems there are two different conduction processes: one in the higher temperature range (from 50 K up to ∼300 K), where the conductivity follows a T⎯⎯⎯√ dependence, and one at lower temperatures (<50 K), where the conductivity follows the exp(−1/T⎯⎯⎯√) dependence. This suggests a strong similarity between the material composition and structure of the filaments and those of the substoichiometric TaOx films. We also discuss the temperature dependence of the conductivity in the framework of possible transport mechanisms, mainly of those normally observed for granular metals. |
| 536 | _ | _ | |0 G:(DE-HGF)POF3-521 |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Thöner, Bo |b 1 |
| 700 | 1 | _ | |0 0000-0003-0118-6321 |a Schönhals, Alexander |b 2 |
| 700 | 1 | _ | |0 P:(DE-Juel1)158062 |a Menzel, Stephan |b 3 |
| 700 | 1 | _ | |0 P:(DE-Juel1)176716 |a Wuttig, Matthias |b 4 |
| 700 | 1 | _ | |0 P:(DE-Juel1)131022 |a Waser, R. |b 5 |
| 700 | 1 | _ | |0 0000-0002-9420-8130 |a Sobolev, Nikolai A. |b 6 |
| 700 | 1 | _ | |0 0000-0002-6766-8553 |a Wouters, Dirk J. |b 7 |
| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |a 10.1063/1.5024504 |g Vol. 112, no. 21, p. 213504 - |n 21 |p 213504 - |t Applied physics letters |v 112 |x 1077-3118 |y 2018 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/851661/files/1.5024504.pdf |y Published on 2018-05-21. Available in OpenAccess from 2019-05-21. |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/851661/files/1.5024504.pdf?subformat=pdfa |x pdfa |y Published on 2018-05-21. Available in OpenAccess from 2019-05-21. |
| 909 | C | O | |o oai:juser.fz-juelich.de:851661 |p openaire |p open_access |p VDB |p driver |p dnbdelivery |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)158062 |a Forschungszentrum Jülich |b 3 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)176716 |a Forschungszentrum Jülich |b 4 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)131022 |a Forschungszentrum Jülich |b 5 |k FZJ |
| 913 | 1 | _ | |0 G:(DE-HGF)POF3-521 |1 G:(DE-HGF)POF3-520 |2 G:(DE-HGF)POF3-500 |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2018 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0200 |2 StatID |a DBCoverage |b SCOPUS |
| 915 | _ | _ | |0 StatID:(DE-HGF)0600 |2 StatID |a DBCoverage |b Ebsco Academic Search |
| 915 | _ | _ | |0 StatID:(DE-HGF)0530 |2 StatID |a Embargoed OpenAccess |
| 915 | _ | _ | |0 StatID:(DE-HGF)0100 |2 StatID |a JCR |b APPL PHYS LETT : 2015 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0150 |2 StatID |a DBCoverage |b Web of Science Core Collection |
| 915 | _ | _ | |0 StatID:(DE-HGF)0110 |2 StatID |a WoS |b Science Citation Index |
| 915 | _ | _ | |0 StatID:(DE-HGF)0111 |2 StatID |a WoS |b Science Citation Index Expanded |
| 915 | _ | _ | |0 StatID:(DE-HGF)9900 |2 StatID |a IF < 5 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0030 |2 StatID |a Peer Review |b ASC |
| 915 | _ | _ | |0 StatID:(DE-HGF)1150 |2 StatID |a DBCoverage |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |0 StatID:(DE-HGF)0300 |2 StatID |a DBCoverage |b Medline |
| 915 | _ | _ | |0 StatID:(DE-HGF)0420 |2 StatID |a Nationallizenz |
| 915 | _ | _ | |0 StatID:(DE-HGF)0199 |2 StatID |a DBCoverage |b Thomson Reuters Master Journal List |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | 1 | _ | |a FullTexts |
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