000851752 001__ 851752
000851752 005__ 20240712084530.0
000851752 0247_ $$2Handle$$a2128/19676
000851752 0247_ $$2URN$$aurn:nbn:de:0001-2018091928
000851752 0247_ $$2ISSN$$a1866-1793
000851752 020__ $$a978-3-95806-347-1
000851752 037__ $$aFZJ-2018-05277
000851752 041__ $$aEnglish
000851752 1001_ $$0P:(DE-Juel1)162152$$aMaurer, Claudia$$b0$$eCorresponding author$$gfemale$$ufzj
000851752 245__ $$aLaser Treatment of Silicon Thin-Films for Photovoltaic Applications$$f- 2018-06-21
000851752 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2018
000851752 300__ $$avii, 165 S.
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000851752 3367_ $$2ORCID$$aDISSERTATION
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000851752 3367_ $$02$$2EndNote$$aThesis
000851752 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1536819563_4755
000851752 3367_ $$2DRIVER$$adoctoralThesis
000851752 4900_ $$aSchriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment$$v432
000851752 502__ $$aRWTH Aachen, Diss., 2018$$bDissertation$$cRWTH Aachen$$d2018
000851752 520__ $$aThin-film silicon is an important material in the fields of photovoltaics. As well as microcrystalline (μc-Si:H), amorphous (a-Si:H) silicon has been used for a long as an absorber in thin-film solar cells. Moreover, the surface passivation of c-Si wafers for heterojunction solar cells is achieved with a-Si:H. In addition, a-Si:H is used as precursor for tunnel oxide passivated contacts. Here, a post-deposition thermal treatment of the a-Si:Hlayer is mandatory. In doing so, the amorphoussilicon develops crystalline phases. This annealing step is conducted at high temperatures, risking damage to the tunnel oxide. As a consequence, there is the idea of replacing amorphous silicon with microcrystalline silicon. In this work, the influence of a laser treatment on the structural, electrical and optical properties of a-Si:H and μc-Si:H was investigated. The diffusion of hydrogen for a-Si:H on glass substrates is thus of special interest. Firstly, the eligibility of Raman spectroscopy to evaluate the influence of a laser treatmenton the hydrogen concentration and the microstructure was studied. Therefore,a-Si:H was deposited on infrared transparent substrates. After deposition, the samples were annealed at different temperatures in a furnace. These samples were also analyzed with Fourier Transform Infrared Spectroscopy, a well-established method, in addition to Raman spectroscopy. The comparison of both analysis methods proved that Raman spectroscopy can be used to determine the relative change of the hydrogen concentration of amorphous silicon. In addition, the qualitative evolution of the microstructure parameter is competitive. As a result, Raman spectroscopy can be used to evaluate the influence of a Laser treatmenton the hydrogen concentration and the microstructure parameter of amorphous silicon. [...]
000851752 536__ $$0G:(DE-HGF)POF3-121$$a121 - Solar cells of the next generation (POF3-121)$$cPOF3-121$$fPOF III$$x0
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000851752 9141_ $$y2018
000851752 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)162152$$aForschungszentrum Jülich$$b0$$kFZJ
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000851752 920__ $$lyes
000851752 9201_ $$0I:(DE-Juel1)IEK-5-20101013$$kIEK-5$$lPhotovoltaik$$x0
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