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@PHDTHESIS{Maurer:851752,
      author       = {Maurer, Claudia},
      title        = {{L}aser {T}reatment of {S}ilicon {T}hin-{F}ilms for
                      {P}hotovoltaic {A}pplications},
      volume       = {432},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2018-05277},
      isbn         = {978-3-95806-347-1},
      series       = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
                      Umwelt / Energy $\&$ Environment},
      pages        = {vii, 165 S.},
      year         = {2018},
      note         = {RWTH Aachen, Diss., 2018},
      abstract     = {Thin-film silicon is an important material in the fields of
                      photovoltaics. As well as microcrystalline (μc-Si:H),
                      amorphous (a-Si:H) silicon has been used for a long as an
                      absorber in thin-film solar cells. Moreover, the surface
                      passivation of c-Si wafers for heterojunction solar cells is
                      achieved with a-Si:H. In addition, a-Si:H is used as
                      precursor for tunnel oxide passivated contacts. Here, a
                      post-deposition thermal treatment of the a-Si:Hlayer is
                      mandatory. In doing so, the amorphoussilicon develops
                      crystalline phases. This annealing step is conducted at high
                      temperatures, risking damage to the tunnel oxide. As a
                      consequence, there is the idea of replacing amorphous
                      silicon with microcrystalline silicon. In this work, the
                      influence of a laser treatment on the structural, electrical
                      and optical properties of a-Si:H and μc-Si:H was
                      investigated. The diffusion of hydrogen for a-Si:H on glass
                      substrates is thus of special interest. Firstly, the
                      eligibility of Raman spectroscopy to evaluate the influence
                      of a laser treatmenton the hydrogen concentration and the
                      microstructure was studied. Therefore,a-Si:H was deposited
                      on infrared transparent substrates. After deposition, the
                      samples were annealed at different temperatures in a
                      furnace. These samples were also analyzed with Fourier
                      Transform Infrared Spectroscopy, a well-established method,
                      in addition to Raman spectroscopy. The comparison of both
                      analysis methods proved that Raman spectroscopy can be used
                      to determine the relative change of the hydrogen
                      concentration of amorphous silicon. In addition, the
                      qualitative evolution of the microstructure parameter is
                      competitive. As a result, Raman spectroscopy can be used to
                      evaluate the influence of a Laser treatmenton the hydrogen
                      concentration and the microstructure parameter of amorphous
                      silicon. [...]},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:0001-2018091928},
      url          = {https://juser.fz-juelich.de/record/851752},
}