Hauptseite > Publikationsdatenbank > Laser Treatment of Silicon Thin-Films for Photovoltaic Applications > print

001     851752
005     20240712084530.0
020 _ _ |a 978-3-95806-347-1
024 7 _ |2 Handle
|a 2128/19676
024 7 _ |2 URN
|a urn:nbn:de:0001-2018091928
024 7 _ |2 ISSN
|a 1866-1793
037 _ _ |a FZJ-2018-05277
041 _ _ |a English
100 1 _ |0 P:(DE-Juel1)162152
|a Maurer, Claudia
|b 0
|e Corresponding author
|g female
|u fzj
245 _ _ |a Laser Treatment of Silicon Thin-Films for Photovoltaic Applications
|f - 2018-06-21
260 _ _ |a Jülich
|b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
|c 2018
300 _ _ |a vii, 165 S.
336 7 _ |2 DataCite
|a Output Types/Dissertation
336 7 _ |0 PUB:(DE-HGF)3
|2 PUB:(DE-HGF)
|a Book
|m book
336 7 _ |2 ORCID
|a DISSERTATION
336 7 _ |2 BibTeX
|a PHDTHESIS
336 7 _ |0 2
|2 EndNote
|a Thesis
336 7 _ |0 PUB:(DE-HGF)11
|2 PUB:(DE-HGF)
|a Dissertation / PhD Thesis
|b phd
|m phd
|s 1536819563_4755
336 7 _ |2 DRIVER
|a doctoralThesis
490 0 _ |a Schriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment
|v 432
502 _ _ |a RWTH Aachen, Diss., 2018
|b Dissertation
|c RWTH Aachen
|d 2018
520 _ _ |a Thin-film silicon is an important material in the fields of photovoltaics. As well as microcrystalline (μc-Si:H), amorphous (a-Si:H) silicon has been used for a long as an absorber in thin-film solar cells. Moreover, the surface passivation of c-Si wafers for heterojunction solar cells is achieved with a-Si:H. In addition, a-Si:H is used as precursor for tunnel oxide passivated contacts. Here, a post-deposition thermal treatment of the a-Si:Hlayer is mandatory. In doing so, the amorphoussilicon develops crystalline phases. This annealing step is conducted at high temperatures, risking damage to the tunnel oxide. As a consequence, there is the idea of replacing amorphous silicon with microcrystalline silicon. In this work, the influence of a laser treatment on the structural, electrical and optical properties of a-Si:H and μc-Si:H was investigated. The diffusion of hydrogen for a-Si:H on glass substrates is thus of special interest. Firstly, the eligibility of Raman spectroscopy to evaluate the influence of a laser treatmenton the hydrogen concentration and the microstructure was studied. Therefore,a-Si:H was deposited on infrared transparent substrates. After deposition, the samples were annealed at different temperatures in a furnace. These samples were also analyzed with Fourier Transform Infrared Spectroscopy, a well-established method, in addition to Raman spectroscopy. The comparison of both analysis methods proved that Raman spectroscopy can be used to determine the relative change of the hydrogen concentration of amorphous silicon. In addition, the qualitative evolution of the microstructure parameter is competitive. As a result, Raman spectroscopy can be used to evaluate the influence of a Laser treatmenton the hydrogen concentration and the microstructure parameter of amorphous silicon. [...]
536 _ _ |0 G:(DE-HGF)POF3-121
|a 121 - Solar cells of the next generation (POF3-121)
|c POF3-121
|f POF III
|x 0
856 4 _ |u https://juser.fz-juelich.de/record/851752/files/Energie_Umwelt_432.pdf
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:851752
|p openaire
|p open_access
|p urn
|p driver
|p VDB
|p dnbdelivery
910 1 _ |0 I:(DE-588b)5008462-8
|6 P:(DE-Juel1)162152
|a Forschungszentrum Jülich
|b 0
|k FZJ
913 1 _ |0 G:(DE-HGF)POF3-121
|1 G:(DE-HGF)POF3-120
|2 G:(DE-HGF)POF3-100
|a DE-HGF
|l Erneuerbare Energien
|v Solar cells of the next generation
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
|b Energie
914 1 _ |y 2018
915 _ _ |0 StatID:(DE-HGF)0510
|2 StatID
|a OpenAccess
915 _ _ |0 LIC:(DE-HGF)CCBY4
|2 HGFVOC
|a Creative Commons Attribution CC BY 4.0
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)IEK-5-20101013
|k IEK-5
|l Photovoltaik
|x 0
980 1 _ |a FullTexts
980 _ _ |a phd
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a book
980 _ _ |a I:(DE-Juel1)IEK-5-20101013
981 _ _ |a I:(DE-Juel1)IMD-3-20101013

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21