000851754 001__ 851754
000851754 005__ 20210129235012.0
000851754 0247_ $$2doi$$a10.1016/j.ssi.2018.09.003
000851754 0247_ $$2ISSN$$a0167-2738
000851754 0247_ $$2ISSN$$a1872-7689
000851754 0247_ $$2WOS$$aWOS:000449131900033
000851754 037__ $$aFZJ-2018-05279
000851754 082__ $$a530
000851754 1001_ $$0P:(DE-Juel1)165926$$aHensling, F. V. E.$$b0$$eCorresponding author
000851754 245__ $$aTailoring the switching performance of resistive switching SrTiO3 devices by SrO interface engineering
000851754 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2018
000851754 3367_ $$2DRIVER$$aarticle
000851754 3367_ $$2DataCite$$aOutput Types/Journal article
000851754 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1536752721_5579
000851754 3367_ $$2BibTeX$$aARTICLE
000851754 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000851754 3367_ $$00$$2EndNote$$aJournal Article
000851754 520__ $$aRedox-based resistive switching is one of the most-promising concepts in the focus of research to meet the ever-growing demand for faster and smaller non-volatile memory devices. In this work we present detailed studies of the impact of cation stoichiometry and surface segregation effects on the performance of the valence change memory model material SrTiO3. In order to clarify if the enhanced switching performance of Sr-rich SrTiO3 devices can be attributed to SrO segregation or to the formation of Sr-rich extended defects, we artificially engineered the formation of SrO islands by depositing additional SrO on top of stoichiometric SrTiO3. We thereby unravel that the enhanced switching performance is solely accounted for by the formation of SrO islands and not influenced by extended defects. Consequently following our findings, we design devices with a further improved retention by tailoring the amount of SrO on the surface.
000851754 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000851754 588__ $$aDataset connected to CrossRef
000851754 7001_ $$0P:(DE-Juel1)169605$$aHeisig, T.$$b1
000851754 7001_ $$0P:(DE-Juel1)157925$$aRaab, N.$$b2
000851754 7001_ $$0P:(DE-Juel1)159254$$aBäumer, Christoph$$b3
000851754 7001_ $$0P:(DE-Juel1)130620$$aDittmann, R.$$b4
000851754 773__ $$0PERI:(DE-600)1500750-9$$a10.1016/j.ssi.2018.09.003$$gVol. 325, p. 247 - 250$$p247 - 250$$tSolid state ionics$$v325$$x0167-2738$$y2018
000851754 8564_ $$uhttps://juser.fz-juelich.de/record/851754/files/1-s2.0-S0167273818305812-main.pdf$$yRestricted
000851754 8564_ $$uhttps://juser.fz-juelich.de/record/851754/files/1-s2.0-S0167273818305812-main.pdf?subformat=pdfa$$xpdfa$$yRestricted
000851754 909CO $$ooai:juser.fz-juelich.de:851754$$pVDB
000851754 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165926$$aForschungszentrum Jülich$$b0$$kFZJ
000851754 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)169605$$aForschungszentrum Jülich$$b1$$kFZJ
000851754 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)159254$$aForschungszentrum Jülich$$b3$$kFZJ
000851754 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130620$$aForschungszentrum Jülich$$b4$$kFZJ
000851754 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000851754 9141_ $$y2018
000851754 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000851754 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSOLID STATE IONICS : 2015
000851754 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000851754 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000851754 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000851754 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000851754 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000851754 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000851754 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000851754 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000851754 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000851754 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000851754 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000851754 980__ $$ajournal
000851754 980__ $$aVDB
000851754 980__ $$aI:(DE-Juel1)PGI-7-20110106
000851754 980__ $$aI:(DE-82)080009_20140620
000851754 980__ $$aUNRESTRICTED