% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Hensling:851754,
      author       = {Hensling, F. V. E. and Heisig, T. and Raab, N. and Bäumer,
                      Christoph and Dittmann, R.},
      title        = {{T}ailoring the switching performance of resistive
                      switching {S}r{T}i{O}3 devices by {S}r{O} interface
                      engineering},
      journal      = {Solid state ionics},
      volume       = {325},
      issn         = {0167-2738},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2018-05279},
      pages        = {247 - 250},
      year         = {2018},
      abstract     = {Redox-based resistive switching is one of the
                      most-promising concepts in the focus of research to meet the
                      ever-growing demand for faster and smaller non-volatile
                      memory devices. In this work we present detailed studies of
                      the impact of cation stoichiometry and surface segregation
                      effects on the performance of the valence change memory
                      model material SrTiO3. In order to clarify if the enhanced
                      switching performance of Sr-rich SrTiO3 devices can be
                      attributed to SrO segregation or to the formation of Sr-rich
                      extended defects, we artificially engineered the formation
                      of SrO islands by depositing additional SrO on top of
                      stoichiometric SrTiO3. We thereby unravel that the enhanced
                      switching performance is solely accounted for by the
                      formation of SrO islands and not influenced by extended
                      defects. Consequently following our findings, we design
                      devices with a further improved retention by tailoring the
                      amount of SrO on the surface.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000449131900033},
      doi          = {10.1016/j.ssi.2018.09.003},
      url          = {https://juser.fz-juelich.de/record/851754},
}