000851779 001__ 851779
000851779 005__ 20210324095516.0
000851779 0247_ $$2Handle$$a2128/19739
000851779 0247_ $$2ISSN$$a1866-1807
000851779 020__ $$a978-3-95806-341-9
000851779 037__ $$aFZJ-2018-05294
000851779 041__ $$aEnglish
000851779 1001_ $$0P:(DE-HGF)0$$aGonzalez, Sara$$b0$$eCorresponding author$$gfemale$$ufzj
000851779 245__ $$aOperando Chemistry and Electronic Structure of Electrode / Ferroelectric Interfaces$$f- 2018-09-28
000851779 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2018
000851779 300__ $$a172 S.
000851779 3367_ $$2DataCite$$aOutput Types/Dissertation
000851779 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
000851779 3367_ $$2ORCID$$aDISSERTATION
000851779 3367_ $$2BibTeX$$aPHDTHESIS
000851779 3367_ $$02$$2EndNote$$aThesis
000851779 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1538123422_14789
000851779 3367_ $$2DRIVER$$adoctoralThesis
000851779 4900_ $$aSchriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies$$v175
000851779 502__ $$aCotutelle, Universität Duisburg und Université Paris-Orsay, Diss., 2016$$bDr.$$cCotutelle, Universität Duisburg und Université Paris-Orsay,$$d2016
000851779 520__ $$aIn the past decade, oxide-based heterostructures have been studied extensively as potentially attractive systems for applications in nanoelectronics. Among them, ferroelectric materials raised interest as potential support for those technological applications. Indeed, their spontaneous electric polarization easily switched by applying an electric field makes them a good basis for non-volatile data storage. Switching the polarization requires a metallic contact with an electrode, thus heterostructures of ferroelectric thin films with metallic electrodes have been widely studied. At the interface between those two materials, free charges of the electrode help screening the polarization induced surface charges detrimental to maintaining proper polarization in the ferroelectric thin film. With metallic oxide electrodes, an ionic displacement at the electrode/ferroelectric interface will help the screening, bringing this interface at the core of the screening process. However, despite important theoretical discoveries, direct experimental data is scarce and the behavior of the electrode/ferroelectric interface is still only partially understood. Further understanding is crucial for a proper integration of ferroelectric films in functioning nanometer-sized devices. In this thesis, photoemission spectroscopy based techniques are used to probe the buried interface of an electrode/BaTiO$_{3}$/electrode heterostructure, for two different top electrodes: the metallic oxide SrRuO$_{3}$ and the Co metal. Combining operando hard X-ray photoemission spectroscopy, hard X-ray photoemission electron microscopy and time-resolved experiments, we acquired information on the behavior of the interface and its response to polarization switching. The work presented is a new step towards a complete understanding on the behavior of the interface between electrodes and ferroelectric materials, in the case of electrode / BaTiO$_{3}$ / electrode heterostructures, in terms of electronic properties, kinetic, and fatigue. The three experiments presented combined state of the art characterization techniques, where the use of hard X-rays and in situ bias application made it possible to resolve the difficult task of probing buried interfaces in working conditions.
000851779 536__ $$0G:(DE-HGF)POF3-899$$a899 - ohne Topic (POF3-899)$$cPOF3-899$$fPOF III$$x0
000851779 8564_ $$uhttps://juser.fz-juelich.de/record/851779/files/Schluesseltech_175.pdf$$yOpenAccess
000851779 909CO $$ooai:juser.fz-juelich.de:851779$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000851779 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000851779 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000851779 9141_ $$y2018
000851779 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b0$$kFZJ
000851779 9131_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
000851779 920__ $$lyes
000851779 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
000851779 980__ $$aphd
000851779 980__ $$aVDB
000851779 980__ $$aUNRESTRICTED
000851779 980__ $$abook
000851779 980__ $$aI:(DE-Juel1)PGI-6-20110106
000851779 9801_ $$aFullTexts