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@ARTICLE{Mei:852387,
      author       = {Mei, Antonio B. and Tang, Yongjian and Grab, Jennifer L.
                      and Schubert, Jürgen and Ralph, Daniel C. and Schlom,
                      Darrell G.},
      title        = {{S}tructural, magnetic, and transport properties of {F}e
                      1− x {R}h x /{M}g{O}(001) films grown by molecular-beam
                      epitaxy},
      journal      = {Applied physics letters},
      volume       = {113},
      number       = {8},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2018-05350},
      pages        = {082403 -},
      year         = {2018},
      abstract     = {Fe1xRhx layers are grown with varying rhodium fraction x on
                      (001)-oriented MgO substrates bymolecular-beam epitaxy. Film
                      structural, morphological, magnetic, and transport
                      properties areinvestigated. At room temperature, layers are
                      ferromagnetic (FM) for x<0.48 and antiferromagnetic(AF) for
                      x>0.48. Separating the two magnetically ordered phases at
                      x¼0.48 is an abruptchange in the Fe1xRhx lattice parameter
                      of Da¼0.0028 nm $(Da/a¼0.9\%).$ For AF layers, theFM state
                      is recovered by heating across a first-order phase
                      transition. The transition leads to a largeresistivity
                      modulation, Dq/q $¼80\%,$ over a narrow temperature range,
                      DT¼3K, in stoichiometricFe0.50Rh0.50/MgO(001). For samples
                      with compositions deviating from x¼0.50,
                      fluctuationsbroaden DT and defect scattering reduces Dq/q.
                      Published by AIP Publishing.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000442615500020},
      doi          = {10.1063/1.5048303},
      url          = {https://juser.fz-juelich.de/record/852387},
}