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@ARTICLE{Kleindienst:856062,
      author       = {Kleindienst, K. R. and Wolff, K. and Schubert, J. and
                      Schneider, R. and Fuchs, D.},
      title        = {{S}tructural properties and anisotropic electronic
                      transport in {S}r{I}r{O}3 films},
      journal      = {Physical review / B},
      volume       = {98},
      number       = {11},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2018-05727},
      pages        = {115113},
      year         = {2018},
      abstract     = {Perovskite SrIrO3 (SIO) films epitaxially deposited with a
                      thickness of about 60 nm on various substratematerials
                      display a nearly strain-relieved state. Films grown on
                      orthorhombic (110) DyScO3 (DSO) are found todisplay an
                      untwinned bulklike orthorhombic structure. However, film
                      deposition on cubic (001) SrTiO3 (STO)induces a twinned
                      growth of SIO. Resistance measurements on the SIO films
                      reveal only weak temperaturedependence, where the resistance
                      R increases with decreasing temperature T. Hall measurements
                      show dominantelectronlike transport throughout the
                      temperature range from 2 to 300 K. At 2 K, the electron
                      concentration andresistivity for SIO on STO amounts to ne =
                      1.4 × 1020 cm−3 and 1 m cm. Interestingly, the film
                      resistance ofuntwinned SIO on DSO along the [1-10] and the
                      [001] direction differs by up to $25\%,$ indicating
                      pronouncedanisotropic electronic transport. The anisotropy
                      of the resistance increases with decreasing T and displays
                      adistinct maximum at around 86 K. The specific T dependence
                      is similar to that of the structural anisotropy√(a2 + b2
                      )/c of bulk SIO. Therefore, anisotropic electronic transport
                      in SIO is very likely induced by theorthorhombic distortion.
                      Consequently, for twinned SIO films on STO anisotropy
                      vanishes nearly completely.The experimental results show
                      that structural changes are very likely responsible for the
                      observed anisotropicelectronic transport. The strong
                      sensitivity of the electronic transport in SIO films may be
                      explained in terms ofthe narrow electronlike bands in SIO
                      caused by spin-orbit coupling and orthorhombic distortion.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000444205500001},
      doi          = {10.1103/PhysRevB.98.115113},
      url          = {https://juser.fz-juelich.de/record/856062},
}