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| Hauptseite > Publikationsdatenbank > Structural properties and anisotropic electronic transport in SrIrO3 films > print |
| Hauptseite > Publikationsdatenbank > Structural properties and anisotropic electronic transport in SrIrO3 films > print |
| 001 | 856062 | ||
| 005 | 20230426083202.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevB.98.115113 |2 doi |
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| 100 | 1 | _ | |a Kleindienst, K. R. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Structural properties and anisotropic electronic transport in SrIrO3 films |
| 260 | _ | _ | |a Woodbury, NY |c 2018 |b Inst. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Perovskite SrIrO3 (SIO) films epitaxially deposited with a thickness of about 60 nm on various substratematerials display a nearly strain-relieved state. Films grown on orthorhombic (110) DyScO3 (DSO) are found todisplay an untwinned bulklike orthorhombic structure. However, film deposition on cubic (001) SrTiO3 (STO)induces a twinned growth of SIO. Resistance measurements on the SIO films reveal only weak temperaturedependence, where the resistance R increases with decreasing temperature T. Hall measurements show dominantelectronlike transport throughout the temperature range from 2 to 300 K. At 2 K, the electron concentration andresistivity for SIO on STO amounts to ne = 1.4 × 1020 cm−3 and 1 m cm. Interestingly, the film resistance ofuntwinned SIO on DSO along the [1-10] and the [001] direction differs by up to 25%, indicating pronouncedanisotropic electronic transport. The anisotropy of the resistance increases with decreasing T and displays adistinct maximum at around 86 K. The specific T dependence is similar to that of the structural anisotropy√(a2 + b2 )/c of bulk SIO. Therefore, anisotropic electronic transport in SIO is very likely induced by theorthorhombic distortion. Consequently, for twinned SIO films on STO anisotropy vanishes nearly completely.The experimental results show that structural changes are very likely responsible for the observed anisotropicelectronic transport. The strong sensitivity of the electronic transport in SIO films may be explained in terms ofthe narrow electronlike bands in SIO caused by spin-orbit coupling and orthorhombic distortion. |
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| 773 | 1 | 8 | |a 10.1103/physrevb.98.115113 |b American Physical Society (APS) |d 2018-09-10 |n 11 |p 115113 |3 journal-article |2 Crossref |t Physical Review B |v 98 |y 2018 |x 2469-9950 |
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| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/856062/files/KOOP-KIT-Schubert_SrIrO3.pdf |
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