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@ARTICLE{Rainko:856566,
      author       = {Rainko, Denis and Ikonic, Zoran and Vukmirović, Nenad and
                      Stange, Daniela and von den Driesch, Nils and Grützmacher,
                      Detlev and Buca, Dan Mihai},
      title        = {{I}nvestigation of carrier confinement in direct bandgap
                      {G}e{S}n/{S}i{G}e{S}n 2{D} and 0{D} heterostructures},
      journal      = {Scientific reports},
      volume       = {8},
      number       = {1},
      issn         = {2045-2322},
      address      = {[London]},
      publisher    = {Macmillan Publishers Limited, part of Springer Nature},
      reportid     = {FZJ-2018-05943},
      pages        = {15557},
      year         = {2018},
      note         = {Gebühren ergänzt 19.11.18},
      abstract     = {Since the first demonstration of lasing in direct bandgap
                      GeSn semiconductors, the research efforts forthe realization
                      of electrically pumped group IV lasers monolithically
                      integrated on Si have significantly intensified. This led to
                      epitaxial studies of GeSn/SiGeSn hetero- and nanostructures,
                      where charge carrier confinement strongly improves the
                      radiative emission properties. Based on recent experimental
                      literature data, in this report we discuss the advantages of
                      GeSn/SiGeSn multi quantum well and quantum dot structures,
                      aiming to propose a roadmap for group IV epitaxy.
                      Calculations based on 8-band k∙p and effective mass method
                      have been performed to determine band discontinuities, the
                      energy difference between Γ- and L-valley conduction band
                      edges, and optical properties such as material gain and
                      optical cross section. The effects of these parameters are
                      systematically analyzed for an experimentally achievable
                      range of Sn (10 to 20 $at.\%)$ and Si (1 to 10 $at.\%)$
                      contents, as well as strain values (−1 to $1\%).$ We show
                      that charge carriers can be efficiently confined in the
                      active region of optical devices for experimentally
                      acceptable Sn contents in both multi quantum well and
                      quantum dot configurations.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30348982},
      UT           = {WOS:000447848300005},
      doi          = {10.1038/s41598-018-33820-1},
      url          = {https://juser.fz-juelich.de/record/856566},
}