TY  - JOUR
AU  - Demonchaux, T.
AU  - Sossoe, K. K.
AU  - Dzagli, M. M.
AU  - Nys, J. P.
AU  - Berthe, M.
AU  - Troadec, D.
AU  - Addad, A.
AU  - Veillerot, M.
AU  - Patriarche, G.
AU  - von Bardeleben, H. J.
AU  - Schnedler, Michael
AU  - Coinon, C.
AU  - Lefebvre, I.
AU  - Mohou, M. A.
AU  - Stiévenard, D.
AU  - Lampin, J. F.
AU  - Ebert, Philipp
AU  - Wallart, X.
AU  - Grandidier, B.
TI  - Chemical nature of the Anion antisite in dilute Phosphide GaAs1-(x)P(x) alloy grown at low temperature
JO  - Physical review materials
VL  - 2
SN  - 2475-9953
CY  - College Park, MD
PB  - APS
M1  - FZJ-2018-05966
SP  - 104601
PY  - 2018
AB  - While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sectional scanning tunneling microscopy (STM), we investigate low-temperature-grown dilute GaAs1−xPx alloys. High concentrations of negatively charged point defects are found. Combined with transmission electron microscopy and pump-probe transient reflectivity, this study shows that the defects have a behavior similar to the group-V antisites. Further analyses with x-ray diffraction point to the preferential incorporation of arsenic antisites, consistent with ab initio calculations, that yield a formation energy 0.83 eV lower than for phosphorus antisites. Although the negative charge carried by the arsenic antisites in the STM images is shown to be induced by the proximity of the STM tip, the arsenic antisites are not randomly distributed in the alloy, providing insight into the evolution of their charge state during the growth.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000447469400003
DO  - DOI:10.1103/PhysRevMaterials.2.104601
UR  - https://juser.fz-juelich.de/record/856594
ER  -