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@ARTICLE{Demonchaux:856594,
      author       = {Demonchaux, T. and Sossoe, K. K. and Dzagli, M. M. and Nys,
                      J. P. and Berthe, M. and Troadec, D. and Addad, A. and
                      Veillerot, M. and Patriarche, G. and von Bardeleben, H. J.
                      and Schnedler, Michael and Coinon, C. and Lefebvre, I. and
                      Mohou, M. A. and Stiévenard, D. and Lampin, J. F. and
                      Ebert, Philipp and Wallart, X. and Grandidier, B.},
      title        = {{C}hemical nature of the {A}nion antisite in dilute
                      {P}hosphide {G}a{A}s1-(x){P}(x) alloy grown at low
                      temperature},
      journal      = {Physical review materials},
      volume       = {2},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2018-05966},
      pages        = {104601},
      year         = {2018},
      abstract     = {While nonstoichiometric binary III-V compounds are known to
                      contain group-V antisites, the growth of ternary alloys
                      consisting of two group-V elements might give additional
                      degrees of freedom in the chemical nature of these
                      antisites. Using cross-sectional scanning tunneling
                      microscopy (STM), we investigate low-temperature-grown
                      dilute GaAs1−xPx alloys. High concentrations of negatively
                      charged point defects are found. Combined with transmission
                      electron microscopy and pump-probe transient reflectivity,
                      this study shows that the defects have a behavior similar to
                      the group-V antisites. Further analyses with x-ray
                      diffraction point to the preferential incorporation of
                      arsenic antisites, consistent with ab initio calculations,
                      that yield a formation energy 0.83 eV lower than for
                      phosphorus antisites. Although the negative charge carried
                      by the arsenic antisites in the STM images is shown to be
                      induced by the proximity of the STM tip, the arsenic
                      antisites are not randomly distributed in the alloy,
                      providing insight into the evolution of their charge state
                      during the growth.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000447469400003},
      doi          = {10.1103/PhysRevMaterials.2.104601},
      url          = {https://juser.fz-juelich.de/record/856594},
}