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| Hauptseite > Publikationsdatenbank > Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns > print |
| Hauptseite > Publikationsdatenbank > Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns > print |
| 001 | 856885 | ||
| 005 | 20240610120417.0 | ||
| 024 | 7 | _ | |a 10.1021/acsnano.8b04444 |2 doi |
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| 037 | _ | _ | |a FZJ-2018-06217 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Zhang, Qiang |0 0000-0002-1788-9243 |b 0 |
| 245 | _ | _ | |a Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns |
| 260 | _ | _ | |a Washington, DC |c 2018 |b Soc. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a The moiré pattern formed between a two-dimensional (2D) material and the substrate has played a crucial role in tuning the electronic structure of the 2D material. Here, by using scanning tunneling microscopy and spectroscopy, we found a moiré-pattern-dependent band gap and work function modulation in hexagonal boron nitride (hBN)/Cu(111) heterostructures, whose amplitudes increase with the moiré pattern wavelength. Moreover, the work function modulation shifts agree well with the conduction band edge shifts, indicating a spatially constant electron affinity for the hBN layer. Density functional theory calculations showed that these observations in hBN/Cu(111) heterostructures mainly originated from the hybridization of the N 3pz orbital and Cu 4s orbital in different atomic configurations. Our results show that the twist-angle dependence of moiré patterns in hBN/Cu(111) heterostructures can be used to tailor the electronic properties including band gap and work function. |
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| 700 | 1 | _ | |a Yu, Jin |0 0000-0003-1074-2465 |b 1 |
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| 700 | 1 | _ | |a Zhang, Chendong |0 P:(DE-HGF)0 |b 3 |
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| 700 | 1 | _ | |a Chou, Mei-Yin |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Shih, Chih-Kang |0 0000-0003-2734-7023 |b 6 |e Corresponding author |
| 700 | 1 | _ | |a Zeng, Changgan |0 0000-0001-8630-845X |b 7 |
| 700 | 1 | _ | |a Yuan, Shengjun |0 P:(DE-HGF)0 |b 8 |
| 773 | _ | _ | |a 10.1021/acsnano.8b04444 |g Vol. 12, no. 9, p. 9355 - 9362 |0 PERI:(DE-600)2383064-5 |n 9 |p 9355 - 9362 |t ACS nano |v 12 |y 2018 |x 1936-086X |
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