TY  - JOUR
AU  - Baeumer, Christoph
AU  - Funck, Carsten
AU  - Locatelli, Andrea
AU  - Menteş, Tevfik Onur
AU  - Genuzio, Francesca
AU  - Heisig, Thomas
AU  - Hensling, Felix
AU  - Raab, Nicolas
AU  - Schneider, Claus M.
AU  - Menzel, Stephan
AU  - Waser, Rainer
AU  - Dittmann, Regina
TI  - In-Gap States and Band-Like Transport in Memristive Devices
JO  - Nano letters
VL  - 19
IS  - 1
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2018-06248
SP  - 54-60
PY  - 2019
AB  - Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface.
LB  - PUB:(DE-HGF)16
C6  - pmid:30241437
UR  - <Go to ISI:>//WOS:000455561300007
DO  - DOI:10.1021/acs.nanolett.8b03023
UR  - https://juser.fz-juelich.de/record/856921
ER  -