% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Baeumer:856921,
      author       = {Baeumer, Christoph and Funck, Carsten and Locatelli, Andrea
                      and Menteş, Tevfik Onur and Genuzio, Francesca and Heisig,
                      Thomas and Hensling, Felix and Raab, Nicolas and Schneider,
                      Claus M. and Menzel, Stephan and Waser, Rainer and Dittmann,
                      Regina},
      title        = {{I}n-{G}ap {S}tates and {B}and-{L}ike {T}ransport in
                      {M}emristive {D}evices},
      journal      = {Nano letters},
      volume       = {19},
      number       = {1},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2018-06248},
      pages        = {54-60},
      year         = {2019},
      abstract     = {Point defects such as oxygen vacancies cause emergent
                      phenomena such as resistive switching in transition-metal
                      oxides, but their influence on the electron-transport
                      properties is far from being understood. Here, we employ
                      direct mapping of the electronic structure of a memristive
                      device by spectromicroscopy. We find that oxygen vacancies
                      result in in-gap states that we use as input for single-band
                      transport simulations. Because the in-gap states are
                      situated below the Fermi level, they do not contribute to
                      the current directly but impact the shape of the conduction
                      band. Accordingly, we can describe our devices with
                      band-like transport and tunneling across the Schottky
                      barrier at the interface.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30241437},
      UT           = {WOS:000455561300007},
      doi          = {10.1021/acs.nanolett.8b03023},
      url          = {https://juser.fz-juelich.de/record/856921},
}