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@PHDTHESIS{Lpke:856930,
      author       = {Lüpke, Felix},
      title        = {{S}canning tunneling potentiometry at nanoscale defects in
                      thin films},
      volume       = {185},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2018-06257},
      isbn         = {978-3-95806-361-7},
      series       = {Schriften des Forschungszentrums Jülich. Reihe
                      Schlüsseltechnologien / Key Technologies},
      pages        = {IV, 144 S.},
      year         = {2018},
      note         = {RWTH Aachen, Diss., 2017},
      abstract     = {The continuous miniaturization of electronics has led to
                      smaller and more powerful devices inour everyday life, such
                      as smart phones and tablet computers. This process is
                      substantiated by Moore’s law, which predicts shrinking of
                      electronic devices by a factor of two every two years[1].
                      While this model described the development over the last
                      decades astonishingly well, it has come clear that it will
                      break down in the near future [2, 3, 4, 5], which results
                      from technical challenges in the fabrication of such small
                      devices. However, even if the fabrication technology would
                      not be the limiting factor, it is clear that at some point a
                      fundamental size-limit for a classical transistor is reached
                      – a single-atom transistor [6]. Generally, transistors
                      consist of areas of differently doped semiconductors, mainly
                      silicon (Si). The doping is the result of atomic defects
                      within this host lattice of Si atoms. The positioning of the
                      dopants in the Si lattice is a random process, such that for
                      ultra-small devices, in the limit where the doping of the Si
                      is determined by only a few doping atoms, small variations
                      in the local dopant configuration can have large effects on
                      the resulting device properties. The same is true for
                      unintentional lattice defects, such as lattice vacancies,
                      interstitial atoms, domain boundaries and step edges on the
                      sample surface. In large devices, the exact number of such
                      defects often is not too critical because the device
                      properties are average over a large volume. In a device
                      consisting of only few atoms however, e.g. an unintended
                      atomic vacancy almost certainly leads to a failure of the
                      device. As a result, the search for alternative concepts for
                      future electronics is flourishing. Recent developments show
                      that spintronics (spin-based electronics) [7] and quantum
                      computing [8] could be a next big step in computer
                      technology. At the forefront of these two topics are
                      three-dimensional topological insulators (3D TIs), which
                      have been first proposed in 2005 [9] by C. L. Kane and E. J.
                      Mele. What makes these materials promising candidates for
                      future electronic devices are their two-dimensional surface
                      states, where the spin of the charge carriers is locked to
                      their momentum. Furthermore, the corresponding dispersion
                      relation has the form of a linear dependence of the energy
                      on the impulse, resulting in the so-called Dirac cone [10].
                      As a result, new pathways for the realization of spintronics
                      are opened, where the spin polarization of a current can be
                      controlled simply its current direction. Furthermore, it has
                      been shown that TIs in combination with superconductors can
                      lead to the formation of Majorana fermions [11], which are
                      theoretically predicted to be suitable for the preparation
                      of quantum bits [12, 13]. The combination of multiple of
                      such quantum bits into quantum computers has the potential
                      to solve certain problems much faster than any classical
                      computers [14]. However, for these new materials to find
                      their ways into applications, a miniaturization of the
                      corresponding devices is required. Here, again the
                      fabrication of ultra-small devices depends crucially on the
                      behavior of defects in such systems. Due to this ultimate
                      importance, the fundamental properties of defects under
                      current flow have acquired an increasing interest in the
                      research community and also electronics industry [15, 16,17,
                      18, 19]. ...},
      cin          = {PGI-3},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/856930},
}