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@ARTICLE{Zanolli:857662,
      author       = {Zanolli, Z. and Niu, C. and Bihlmayer, G. and Mokrousov, Y.
                      and Mavropoulos, P. and Verstraete, M. J. and Blügel, S.},
      title        = {{H}ybrid quantum anomalous {H}all effect at graphene-oxide
                      interfaces},
      journal      = {Physical review / B},
      volume       = {98},
      number       = {15},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2018-06640},
      pages        = {155404},
      year         = {2018},
      abstract     = {Interfaces are ubiquitous in materials science, and in
                      devices in particular. As device dimensions are constantly
                      shrinking, understanding the physical properties emerging at
                      interfaces is crucial to exploit them for applications, here
                      for spintronics. Using first-principles techniques and Monte
                      Carlo simulations, we investigate the mutual magnetic
                      interaction at the interface between graphene and an
                      antiferromagnetic semiconductor BaMnO3. We find that
                      graphene deeply affects the magnetic state of the substrate,
                      down to several layers below the interface, by inducing an
                      overall magnetic softening, and switching the in-plane
                      magnetic ordering from antiferromagnetic to ferromagnetic.
                      The graphene-BaMnO3 system presents a Rashba gap 300 times
                      larger than in pristine graphene, leading to a flavor of
                      quantum anomalous Hall effect (QAHE), a hybrid QAHE,
                      characterized by the coexistence of metallic and topological
                      insulating states. These findings could be exploited to
                      fabricate devices that use graphene to control the magnetic
                      configuration of a substrate.},
      cin          = {PGI-1 / IAS-1 / JARA-FIT / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)IAS-1-20090406 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143) /
                      Nanoelectronics and spintronics by design
                      $(jhpc39_20160501)$ / Electronic and magnetic properties of
                      graphene-ferroelectric and graphene-magnetolectric
                      interfaces. $(jara0088_20131101)$ / Magnetic Anisotropy of
                      Metallic Layered Systems and Nanostructures
                      $(jiff13_20131101)$},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143 /
                      $G:(DE-Juel1)jhpc39_20160501$ /
                      $G:(DE-Juel1)jara0088_20131101$ /
                      $G:(DE-Juel1)jiff13_20131101$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000446554000009},
      doi          = {10.1103/PhysRevB.98.155404},
      url          = {https://juser.fz-juelich.de/record/857662},
}