Home > Publications database > Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions > print |
001 | 858274 | ||
005 | 20240619091239.0 | ||
024 | 7 | _ | |a 10.1021/acsphotonics.8b00350 |2 doi |
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100 | 1 | _ | |a Emelianov, Aleksei V. |0 0000-0002-9953-6934 |b 0 |e Corresponding author |
245 | _ | _ | |a Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions |
260 | _ | _ | |a Washington, DC |c 2018 |b ACS |
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520 | _ | _ | |a Single and few-layer graphene photodetectors have attracted much attention in the past few years. Pristine graphene shows a very weak response to visible light; hence, fabrication of complex graphene-based detectors is a challenging task. In this work, we utilize the ultrafast laser functionalization of single-layer CVD graphene for highly desirable maskless fabrication of micro- and nanoscale devices. We investigate the optoelectronic response of pristine and functionalized devices under femtosecond and continuous wave lasers irradiation. We demonstrate that the photocurrent generation in p–p+ junctions formed in single-layer graphene is related to the photothermoelectric effect. The photoresponsivity of our laser patterned single-layer graphene junctions is shown to be as high as 100 mA/W with noise equivalent power less than 6 kW/cm2. These results open a path to a low-cost maskless technology for fabrication of graphene-based optoelectronic devices with tunable properties for spectroscopy, signal processing, and other applications. |
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700 | 1 | _ | |a Offenhäusser, Andreas |0 P:(DE-Juel1)128713 |b 2 |
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700 | 1 | _ | |a Romero, Pablo M. |0 P:(DE-HGF)0 |b 4 |
700 | 1 | _ | |a Bobrinetskiy, Ivan I. |0 P:(DE-HGF)0 |b 5 |
773 | _ | _ | |a 10.1021/acsphotonics.8b00350 |g Vol. 5, no. 8, p. 3107 - 3115 |0 PERI:(DE-600)2745489-7 |n 8 |p 3107 - 3115 |t ACS photonics |v 5 |y 2018 |x 2330-4022 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/858274/files/acsphotonics.8b00350.pdf |y Restricted |
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