| Home > Publications database > Routes for increasing endurance and retention in HfO 2 -based resistive switching memories > print |
| 001 | 858496 | ||
| 005 | 20210130000002.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevMaterials.2.115002 |2 doi |
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| 100 | 1 | _ | |a Rushchanskii, Konstantin |0 P:(DE-Juel1)130926 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Routes for increasing endurance and retention in HfO 2 -based resistive switching memories |
| 260 | _ | _ | |a College Park, MD |c 2018 |b APS |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a We investigate metastable and thermodynamically stable phases that can be expected to occur in electroformed filaments in resistively switching hafnia, and discuss their relevance for the switching process. To this end, we conduct a study, based on density functional theory combined with an evolutionary algorithm determining the composition-dependent (meta)stable phases in HfOx, focusing on the region 0 |
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| 536 | _ | _ | |a Ab initio study of novel multiferroic materials (jiff38_20090701) |0 G:(DE-Juel1)jiff38_20090701 |c jiff38_20090701 |f Ab initio study of novel multiferroic materials |x 2 |
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| 700 | 1 | _ | |a Ležaić, Marjana |0 P:(DE-Juel1)130799 |b 2 |u fzj |
| 773 | _ | _ | |a 10.1103/PhysRevMaterials.2.115002 |g Vol. 2, no. 11, p. 115002 |0 PERI:(DE-600)2898355-5 |n 11 |p 115002 |t Physical review materials |v 2 |y 2018 |x 2475-9953 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/858496/files/PhysRevMaterials.2.115002.pdf |y OpenAccess |
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