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@ARTICLE{Guo:858553,
      author       = {Guo, Chenyang and Chen, Xing and Ding, Song-Yuan and Mayer,
                      Dirk and Wang, Qingling and Zhao, Zhikai and Ni, Lifa and
                      Liu, Haitao and Lee, Takhee and Xu, Bingqian and Xiang,
                      Dong},
      title        = {{M}olecular {O}rbital {G}ating {S}urface-{E}nhanced {R}aman
                      {S}cattering},
      journal      = {ACS nano},
      volume       = {12},
      number       = {11},
      issn         = {1936-086X},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2018-07423},
      pages        = {11229 - 11235},
      year         = {2018},
      abstract     = {One of the promising approaches to meet the urgent demand
                      for further device miniaturization is to create functional
                      devices using single molecules. Although various
                      single-molecule electronic devices have been demonstrated
                      recently, single-molecule optical devices which use external
                      stimulations to control the optical response of a single
                      molecule have rarely been reported. Here, we propose and
                      demonstrate a field-effect Raman scattering (FERS) device
                      with a single molecule, an optical counterpart to
                      field-effect transistors (a key component of modern
                      electronics). With our devices, the gap size between
                      electrodes can be precisely adjusted at subangstrom accuracy
                      to form single molecular junctions as well as to reach the
                      maximum performance of Raman scattering via plasmonic
                      enhancement. Based on this maximum performance, we
                      demonstrated that the intensity of Raman scattering can be
                      further enhanced by an additional $∼40\%$ if the orbitals
                      of the molecules bridged two electrodes were shifted by a
                      gating voltage. This finding not only provides a method to
                      increase the sensitivity of Raman scattering beyond the
                      limit of plasmonic enhancement, but also makes it feasible
                      to realize addressable functional FERS devices with a gate
                      electrode array.},
      cin          = {ICS-8 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ICS-8-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:30335940},
      UT           = {WOS:000451789200062},
      doi          = {10.1021/acsnano.8b05826},
      url          = {https://juser.fz-juelich.de/record/858553},
}