000858859 001__ 858859
000858859 005__ 20240610120411.0
000858859 0247_ $$2doi$$a10.1080/14786435.2018.1516899
000858859 0247_ $$2ISSN$$a0031-8086
000858859 0247_ $$2ISSN$$a1478-6435
000858859 0247_ $$2ISSN$$a1478-6443
000858859 0247_ $$2ISSN$$a1941-5796
000858859 0247_ $$2ISSN$$a1941-580X
000858859 0247_ $$2ISSN$$a1941-580x
000858859 0247_ $$2ISSN$$a1941-5850
000858859 0247_ $$2ISSN$$a1941-5869
000858859 0247_ $$2ISSN$$a1941-5966
000858859 0247_ $$2ISSN$$a1941-5974
000858859 0247_ $$2ISSN$$a1941-5982
000858859 0247_ $$2ISSN$$a1941-5990
000858859 0247_ $$2WOS$$aWOS:000447813000002
000858859 037__ $$aFZJ-2018-07695
000858859 082__ $$a530
000858859 1001_ $$0P:(DE-Juel1)165179$$aZhang, Lei$$b0
000858859 245__ $$aDislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM
000858859 260__ $$aAbingdon$$bTaylor & Francis$$c2018
000858859 3367_ $$2DRIVER$$aarticle
000858859 3367_ $$2DataCite$$aOutput Types/Journal article
000858859 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1545298837_26488
000858859 3367_ $$2BibTeX$$aARTICLE
000858859 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000858859 3367_ $$00$$2EndNote$$aJournal Article
000858859 520__ $$aThe distribution and bending of dislocations in GaN/step-graded (Al,Ga)N/AlN buffer layers grown on Si(111) are investigated by cross-sectional scanning tunnelling microscopy (STM) and scanning transmission electron microscopy (STEM). We observe dislocations with -type Burgers vector intersecting the m-plane cleavage surface and having line directions bent off the [0001] growth direction toward non-polar directions. The spatial distribution of dislocations intersecting the m-plane cleavage surface indicates consecutive bending of dislocations due to strain at interfaces between subsequent lattice mismatched buffer layers and at doping junctions, reducing the density of threading dislocations at the (0001) growth front. No interface misfit dislocations, v-shaped defects, or loss of crystalline quality are observed, demonstrating the high performance of the step-graded (Al,Ga)N/AlN buffer layers on Si for relaxing the lattice constant without creating large defect concentrations.
000858859 536__ $$0G:(DE-HGF)POF3-141$$a141 - Controlling Electron Charge-Based Phenomena (POF3-141)$$cPOF3-141$$fPOF III$$x0
000858859 588__ $$aDataset connected to CrossRef
000858859 7001_ $$0P:(DE-Juel1)145975$$aPortz, Verena$$b1
000858859 7001_ $$0P:(DE-Juel1)143949$$aSchnedler, Michael$$b2
000858859 7001_ $$0P:(DE-Juel1)145711$$aJin, Lei$$b3
000858859 7001_ $$0P:(DE-Juel1)171441$$aWang, Yuhan$$b4
000858859 7001_ $$0P:(DE-HGF)0$$aHao, Xiaopeng$$b5
000858859 7001_ $$0P:(DE-HGF)0$$aEisele, Holger$$b6
000858859 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b7
000858859 7001_ $$0P:(DE-Juel1)130627$$aEbert, Philipp$$b8$$eCorresponding author
000858859 773__ $$0PERI:(DE-600)2136337-7$$a10.1080/14786435.2018.1516899$$gVol. 98, no. 34, p. 3072 - 3085$$n34$$p3072 - 3085$$tThe philosophical magazine$$v98$$x1478-6443$$y2018
000858859 8564_ $$uhttps://juser.fz-juelich.de/record/858859/files/Dislocation%20bending%20in%20GaN%20step%20graded%20Al%20Ga%20N%20AlN%20buffer%20layers%20on%20Si%20111%20investigated%20by%20STM%20and%20STEM.pdf$$yRestricted
000858859 8564_ $$uhttps://juser.fz-juelich.de/record/858859/files/Dislocation%20bending%20in%20GaN%20step%20graded%20Al%20Ga%20N%20AlN%20buffer%20layers%20on%20Si%20111%20investigated%20by%20STM%20and%20STEM.pdf?subformat=pdfa$$xpdfa$$yRestricted
000858859 909CO $$ooai:juser.fz-juelich.de:858859$$pVDB
000858859 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165179$$aForschungszentrum Jülich$$b0$$kFZJ
000858859 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)143949$$aForschungszentrum Jülich$$b2$$kFZJ
000858859 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145711$$aForschungszentrum Jülich$$b3$$kFZJ
000858859 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)171441$$aForschungszentrum Jülich$$b4$$kFZJ
000858859 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144121$$aForschungszentrum Jülich$$b7$$kFZJ
000858859 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130627$$aForschungszentrum Jülich$$b8$$kFZJ
000858859 9131_ $$0G:(DE-HGF)POF3-141$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000858859 9141_ $$y2018
000858859 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000858859 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000858859 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000858859 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000858859 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000858859 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List
000858859 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000858859 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000858859 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000858859 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000858859 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bPHILOS MAG : 2017
000858859 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000858859 920__ $$lyes
000858859 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000858859 980__ $$ajournal
000858859 980__ $$aVDB
000858859 980__ $$aI:(DE-Juel1)PGI-5-20110106
000858859 980__ $$aUNRESTRICTED
000858859 981__ $$aI:(DE-Juel1)ER-C-1-20170209