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@ARTICLE{Zhang:858859,
      author       = {Zhang, Lei and Portz, Verena and Schnedler, Michael and
                      Jin, Lei and Wang, Yuhan and Hao, Xiaopeng and Eisele,
                      Holger and Dunin-Borkowski, Rafal and Ebert, Philipp},
      title        = {{D}islocation bending in {G}a{N}/step-graded
                      ({A}l,{G}a){N}/{A}l{N} buffer layers on {S}i(111)
                      investigated by {STM} and {STEM}},
      journal      = {The philosophical magazine},
      volume       = {98},
      number       = {34},
      issn         = {1478-6443},
      address      = {Abingdon},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {FZJ-2018-07695},
      pages        = {3072 - 3085},
      year         = {2018},
      abstract     = {The distribution and bending of dislocations in
                      GaN/step-graded (Al,Ga)N/AlN buffer layers grown on Si(111)
                      are investigated by cross-sectional scanning tunnelling
                      microscopy (STM) and scanning transmission electron
                      microscopy (STEM). We observe dislocations with -type
                      Burgers vector intersecting the m-plane cleavage surface and
                      having line directions bent off the [0001] growth direction
                      toward non-polar directions. The spatial distribution of
                      dislocations intersecting the m-plane cleavage surface
                      indicates consecutive bending of dislocations due to strain
                      at interfaces between subsequent lattice mismatched buffer
                      layers and at doping junctions, reducing the density of
                      threading dislocations at the (0001) growth front. No
                      interface misfit dislocations, v-shaped defects, or loss of
                      crystalline quality are observed, demonstrating the high
                      performance of the step-graded (Al,Ga)N/AlN buffer layers on
                      Si for relaxing the lattice constant without creating large
                      defect concentrations.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000447813000002},
      doi          = {10.1080/14786435.2018.1516899},
      url          = {https://juser.fz-juelich.de/record/858859},
}