Hauptseite > Publikationsdatenbank > Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM > print

001     858859
005     20240610120411.0
024 7 _ |a 10.1080/14786435.2018.1516899
|2 doi
024 7 _ |a 0031-8086
|2 ISSN
024 7 _ |a 1478-6435
|2 ISSN
024 7 _ |a 1478-6443
|2 ISSN
024 7 _ |a 1941-5796
|2 ISSN
024 7 _ |a 1941-580X
|2 ISSN
024 7 _ |a 1941-580x
|2 ISSN
024 7 _ |a 1941-5850
|2 ISSN
024 7 _ |a 1941-5869
|2 ISSN
024 7 _ |a 1941-5966
|2 ISSN
024 7 _ |a 1941-5974
|2 ISSN
024 7 _ |a 1941-5982
|2 ISSN
024 7 _ |a 1941-5990
|2 ISSN
024 7 _ |a WOS:000447813000002
|2 WOS
037 _ _ |a FZJ-2018-07695
082 _ _ |a 530
100 1 _ |a Zhang, Lei
|0 P:(DE-Juel1)165179
|b 0
245 _ _ |a Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM
260 _ _ |a Abingdon
|c 2018
|b Taylor & Francis
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1545298837_26488
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a The distribution and bending of dislocations in GaN/step-graded (Al,Ga)N/AlN buffer layers grown on Si(111) are investigated by cross-sectional scanning tunnelling microscopy (STM) and scanning transmission electron microscopy (STEM). We observe dislocations with -type Burgers vector intersecting the m-plane cleavage surface and having line directions bent off the [0001] growth direction toward non-polar directions. The spatial distribution of dislocations intersecting the m-plane cleavage surface indicates consecutive bending of dislocations due to strain at interfaces between subsequent lattice mismatched buffer layers and at doping junctions, reducing the density of threading dislocations at the (0001) growth front. No interface misfit dislocations, v-shaped defects, or loss of crystalline quality are observed, demonstrating the high performance of the step-graded (Al,Ga)N/AlN buffer layers on Si for relaxing the lattice constant without creating large defect concentrations.
536 _ _ |a 141 - Controlling Electron Charge-Based Phenomena (POF3-141)
|0 G:(DE-HGF)POF3-141
|c POF3-141
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef
700 1 _ |a Portz, Verena
|0 P:(DE-Juel1)145975
|b 1
700 1 _ |a Schnedler, Michael
|0 P:(DE-Juel1)143949
|b 2
700 1 _ |a Jin, Lei
|0 P:(DE-Juel1)145711
|b 3
700 1 _ |a Wang, Yuhan
|0 P:(DE-Juel1)171441
|b 4
700 1 _ |a Hao, Xiaopeng
|0 P:(DE-HGF)0
|b 5
700 1 _ |a Eisele, Holger
|0 P:(DE-HGF)0
|b 6
700 1 _ |a Dunin-Borkowski, Rafal
|0 P:(DE-Juel1)144121
|b 7
700 1 _ |a Ebert, Philipp
|0 P:(DE-Juel1)130627
|b 8
|e Corresponding author
773 _ _ |a 10.1080/14786435.2018.1516899
|g Vol. 98, no. 34, p. 3072 - 3085
|0 PERI:(DE-600)2136337-7
|n 34
|p 3072 - 3085
|t The philosophical magazine
|v 98
|y 2018
|x 1478-6443
856 4 _ |u https://juser.fz-juelich.de/record/858859/files/Dislocation%20bending%20in%20GaN%20step%20graded%20Al%20Ga%20N%20AlN%20buffer%20layers%20on%20Si%20111%20investigated%20by%20STM%20and%20STEM.pdf
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/858859/files/Dislocation%20bending%20in%20GaN%20step%20graded%20Al%20Ga%20N%20AlN%20buffer%20layers%20on%20Si%20111%20investigated%20by%20STM%20and%20STEM.pdf?subformat=pdfa
|x pdfa
|y Restricted
909 C O |o oai:juser.fz-juelich.de:858859
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)165179
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)143949
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)145711
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)171441
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 7
|6 P:(DE-Juel1)144121
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 8
|6 P:(DE-Juel1)130627
913 1 _ |a DE-HGF
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-140
|0 G:(DE-HGF)POF3-141
|2 G:(DE-HGF)POF3-100
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
|b Energie
914 1 _ |y 2018
915 _ _ |a Nationallizenz
|0 StatID:(DE-HGF)0420
|2 StatID
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0600
|2 StatID
|b Ebsco Academic Search
915 _ _ |a Peer Review
|0 StatID:(DE-HGF)0030
|2 StatID
|b ASC
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Clarivate Analytics Master Journal List
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
|b PHILOS MAG : 2017
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-5-20110106
|k PGI-5
|l Mikrostrukturforschung
|x 0
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-5-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)ER-C-1-20170209

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