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| Hauptseite > Publikationsdatenbank > Peculiar covalent bonding of C 60 /6 H -SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy > print |
| Hauptseite > Publikationsdatenbank > Peculiar covalent bonding of C 60 /6 H -SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy > print |
| 001 | 859057 | ||
| 005 | 20210130000149.0 | ||
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| 100 | 1 | _ | |a Bocquet, F. C. |0 P:(DE-Juel1)167128 |b 0 |
| 245 | _ | _ | |a Peculiar covalent bonding of C 60 /6 H -SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy |
| 260 | _ | _ | |a Bristol |c 2018 |b IOP Publ.80390 |
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| 520 | _ | _ | |a High resolution photoemission with synchrotron radiation was used to study the interfaceformation of a thin layer of C60 on 6H-SiC(0 0 0 1)-(3 × 3), characterized by protrudingSi-tetramers. The results show that C60 is chemisorbed by orbital hybridization between thehighest-occupied molecular orbital (HOMO) and the pz orbital of Si adatom at the apex ofthe tetramers. The covalent nature of the bonding was inferred from core level as well asvalence band spectra. The Si 2p spectra reveal that a large fraction (at least 45%) of the Siadatoms remain unbound despite the reactive character of the associated dangling bonds.This is consistent with a model in which each C60 is attached to the substrate through a singlecovalent C60–Si bond. A binding energy shift of the core levels associated with sub-surface Sior C atoms indicates a decrease of the SiC band bending caused by a charge transfer from theC60 molecules to the substrate via the formation of donor-like interface states. |
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| 773 | _ | _ | |a 10.1088/1361-648X/aaed1a |g Vol. 30, no. 50, p. 505002 - |0 PERI:(DE-600)1472968-4 |n 50 |p 505002 - |t Journal of physics / Condensed matter Condensed matter |v 30 |y 2018 |x 1361-648X |
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