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@INPROCEEDINGS{Han:859058,
      author       = {Han, Qinghua and Aleksa, Paulus and Schubert, Jürgen and
                      Mantl, Siegfried and Zhao, Qing-Tai},
      title        = {{S}ubthreshold {B}ehavior of {MFMIS} and {MFIS}
                      {T}ransistors caused by {F}erroelectric {P}olarization
                      {S}witching},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00009},
      pages        = {S11},
      year         = {2018},
      comment      = {2018 14th IEEE International Conference on Solid-State and
                      Integrated Circuit Technology (ICSICT) : [Proceedings] -
                      IEEE},
      booktitle     = {2018 14th IEEE International
                       Conference on Solid-State and
                       Integrated Circuit Technology (ICSICT)
                       : [Proceedings] - IEEE},
      abstract     = {Ferroelectric polarization switching shows various effects
                      on the performance of metal-ferroelectric-metal-insulator
                      (MFMIS) FETs and metal-ferroelectric-insulator-semiconductor
                      (MFIS) FETs. In a MFMIS FET, polarization switching causes a
                      sudden charge change in the floating gate, which can improve
                      the subthreshold swing (SS) of the FET while the
                      ferroelectric capacitor shows a positive capacitance. The
                      improvement has been proven by experimentally connecting
                      ferroelectric capacitors with different sizes to a normal
                      MOSET. A modified analytic SS equation was developed to
                      account for these effects. In the MFIS FET, the polarization
                      switching causes a transient negative capacitance (NC)
                      effect, which can also improve SS. Sub-thermal SS with a
                      minimum of 8 mV/dec and an average of 30 mV/dec for 2.5
                      decades was observed. However, the transient NC is
                      susceptible to trap charging. With the increasing cycling
                      sweeping measurements of the MFIS FET, the drain current
                      range with sub-thermal SS degrades and finally vanishes.
                      Trap charging effects are supposed to cause such phenomenon.
                      The polarization effect on these two transistors is
                      discussed.},
      month         = {Oct},
      date          = {2018-10-31},
      organization  = {2018 14th IEEE International
                       Conference on Solid-State and
                       Integrated Circuit Technology (ICSICT),
                       Qingdao (China), 31 Oct 2018 - 3 Nov
                       2018},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ICSICT.2018.8564816},
      url          = {https://juser.fz-juelich.de/record/859058},
}