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@INPROCEEDINGS{Han:859058,
author = {Han, Qinghua and Aleksa, Paulus and Schubert, Jürgen and
Mantl, Siegfried and Zhao, Qing-Tai},
title = {{S}ubthreshold {B}ehavior of {MFMIS} and {MFIS}
{T}ransistors caused by {F}erroelectric {P}olarization
{S}witching},
publisher = {IEEE},
reportid = {FZJ-2019-00009},
pages = {S11},
year = {2018},
comment = {2018 14th IEEE International Conference on Solid-State and
Integrated Circuit Technology (ICSICT) : [Proceedings] -
IEEE},
booktitle = {2018 14th IEEE International
Conference on Solid-State and
Integrated Circuit Technology (ICSICT)
: [Proceedings] - IEEE},
abstract = {Ferroelectric polarization switching shows various effects
on the performance of metal-ferroelectric-metal-insulator
(MFMIS) FETs and metal-ferroelectric-insulator-semiconductor
(MFIS) FETs. In a MFMIS FET, polarization switching causes a
sudden charge change in the floating gate, which can improve
the subthreshold swing (SS) of the FET while the
ferroelectric capacitor shows a positive capacitance. The
improvement has been proven by experimentally connecting
ferroelectric capacitors with different sizes to a normal
MOSET. A modified analytic SS equation was developed to
account for these effects. In the MFIS FET, the polarization
switching causes a transient negative capacitance (NC)
effect, which can also improve SS. Sub-thermal SS with a
minimum of 8 mV/dec and an average of 30 mV/dec for 2.5
decades was observed. However, the transient NC is
susceptible to trap charging. With the increasing cycling
sweeping measurements of the MFIS FET, the drain current
range with sub-thermal SS degrades and finally vanishes.
Trap charging effects are supposed to cause such phenomenon.
The polarization effect on these two transistors is
discussed.},
month = {Oct},
date = {2018-10-31},
organization = {2018 14th IEEE International
Conference on Solid-State and
Integrated Circuit Technology (ICSICT),
Qingdao (China), 31 Oct 2018 - 3 Nov
2018},
cin = {PGI-9},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
doi = {10.1109/ICSICT.2018.8564816},
url = {https://juser.fz-juelich.de/record/859058},
}