%0 Conference Paper
%A Han, Qinghua
%A Tromm, Thomas Carl Ulrich
%A Schubert, Jürgen
%A Mantl, Siegfried
%A Zhao, Qing-Tai
%T Steep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYOx
%C Piscataway, NJ
%I IEEE
%M FZJ-2019-00012
%@ 978-1-5386-4811-7
%P 1-3
%D 2018
%X Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers, which is assumed to be caused by the traps in the ferroelectric oxide layer.
%B 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
%C 19 Mar 2018 - 21 Mar 2018, Granada (Spain)
Y2 19 Mar 2018 - 21 Mar 2018
M2 Granada, Spain
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/ULIS.2018.8354733
%U https://juser.fz-juelich.de/record/859061