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000859061 0247_ $$2doi$$a10.1109/ULIS.2018.8354733
000859061 037__ $$aFZJ-2019-00012
000859061 041__ $$aEnglish
000859061 1001_ $$0P:(DE-Juel1)165600$$aHan, Qinghua$$b0$$eCorresponding author
000859061 1112_ $$a2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)$$cGranada$$d2018-03-19 - 2018-03-21$$wSpain
000859061 245__ $$aSteep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYOx
000859061 260__ $$aPiscataway, NJ$$bIEEE$$c2018
000859061 300__ $$a1-3
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000859061 520__ $$aSteep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers, which is assumed to be caused by the traps in the ferroelectric oxide layer.
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000859061 7001_ $$0P:(DE-HGF)0$$aTromm, Thomas Carl Ulrich$$b1
000859061 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b2$$ufzj
000859061 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b3$$ufzj
000859061 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b4$$ufzj
000859061 773__ $$a10.1109/ULIS.2018.8354733
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