TY  - CONF
AU  - Han, Qinghua
AU  - Tromm, Thomas Carl Ulrich
AU  - Schubert, Jürgen
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Steep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYOx
CY  - Piscataway, NJ
PB  - IEEE
M1  - FZJ-2019-00012
SN  - 978-1-5386-4811-7
SP  - 1-3
PY  - 2018
AB  - Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers, which is assumed to be caused by the traps in the ferroelectric oxide layer.
T2  - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
CY  - 19 Mar 2018 - 21 Mar 2018, Granada (Spain)
Y2  - 19 Mar 2018 - 21 Mar 2018
M2  - Granada, Spain
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ULIS.2018.8354733
UR  - https://juser.fz-juelich.de/record/859061
ER  -