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@INPROCEEDINGS{Han:859061,
      author       = {Han, Qinghua and Tromm, Thomas Carl Ulrich and Schubert,
                      Jürgen and Mantl, Siegfried and Zhao, Qing-Tai},
      title        = {{S}teep slope negative capacitance {FDSOI} {MOSFET}s with
                      ferroelectric {H}f{YO}x},
      address      = {Piscataway, NJ},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00012},
      isbn         = {978-1-5386-4811-7},
      pages        = {1-3},
      year         = {2018},
      abstract     = {Steep slope negative capacitance MOSFETs with HfYOx
                      ferroelectric on FDSOI were experimentally demonstrated. An
                      average SS of 30 mV/dec was achieved over 3 decades of drain
                      current. We found that the subthermal SS degrades with the
                      sweeping numbers, which is assumed to be caused by the traps
                      in the ferroelectric oxide layer.},
      month         = {Mar},
      date          = {2018-03-19},
      organization  = {2018 Joint International EUROSOI
                       Workshop and International Conference
                       on Ultimate Integration on Silicon
                       (EUROSOI-ULIS), Granada (Spain), 19 Mar
                       2018 - 21 Mar 2018},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ULIS.2018.8354733},
      url          = {https://juser.fz-juelich.de/record/859061},
}