001     859061
005     20210130000150.0
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020 _ _ |a 978-1-5386-4811-7
020 _ _ |a 9781538648100
020 _ _ |a 9781538648124 (print)
024 7 _ |a 10.1109/ULIS.2018.8354733
|2 doi
037 _ _ |a FZJ-2019-00012
041 _ _ |a English
100 1 _ |a Han, Qinghua
|0 P:(DE-Juel1)165600
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|e Corresponding author
111 2 _ |a 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
|c Granada
|d 2018-03-19 - 2018-03-21
|w Spain
245 _ _ |a Steep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYOx
260 _ _ |a Piscataway, NJ
|c 2018
|b IEEE
300 _ _ |a 1-3
336 7 _ |a CONFERENCE_PAPER
|2 ORCID
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
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336 7 _ |a Output Types/Conference Paper
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336 7 _ |a Contribution to a conference proceedings
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520 _ _ |a Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers, which is assumed to be caused by the traps in the ferroelectric oxide layer.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
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588 _ _ |a Dataset connected to CrossRef Conference
700 1 _ |a Tromm, Thomas Carl Ulrich
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700 1 _ |a Schubert, Jürgen
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700 1 _ |a Mantl, Siegfried
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700 1 _ |a Zhao, Qing-Tai
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773 _ _ |a 10.1109/ULIS.2018.8354733
856 4 _ |u https://juser.fz-juelich.de/record/859061/files/08354733.pdf
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913 1 _ |a DE-HGF
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914 1 _ |y 2018
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