001     859062
005     20210130000150.0
010 _ _ |a
020 _ _ |a 978-1-5386-4811-7
020 _ _ |a 9781538648100
020 _ _ |a 9781538648124 (print)
024 7 _ |a 10.1109/ULIS.2018.8354771
|2 doi
037 _ _ |a FZJ-2019-00013
041 _ _ |a English
100 1 _ |a Liu, Mingshan
|0 P:(DE-Juel1)173033
|b 0
|e Corresponding author
111 2 _ |a 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
|c Granada
|d 2018-03-19 - 2018-03-21
|w Spain
245 _ _ |a Realization of vertical Ge nanowires for gate-all-around transistors
260 _ _ |a Piscataway, NJ
|c 2018
|b IEEE
295 1 0 |a [Ebook] EUROSOI-ULIS 2018 : 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) : Granada, March 19-21, 2018 / Gámiz, Francisco , Piscataway, NJ : IEEE, 2018,
300 _ _ |a 1-3
336 7 _ |a CONFERENCE_PAPER
|2 ORCID
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a Output Types/Conference Paper
|2 DataCite
336 7 _ |a Contribution to a conference proceedings
|b contrib
|m contrib
|0 PUB:(DE-HGF)8
|s 1547477531_23129
|2 PUB:(DE-HGF)
336 7 _ |a Contribution to a book
|0 PUB:(DE-HGF)7
|2 PUB:(DE-HGF)
|m contb
520 _ _ |a Towards gate-all-around (GAA) FETs, we present the top-down realization of vertical Ge nanowires (NWs) with defect-free sidewall and perfect anisotropy. The NW patterns are transferred by a novel inductively coupled plasma reactive ion etching (ICP-RIE) technique. With optimized etching conditions, sub-60 nm diameter Ge nanowires are guaranteed while mitigating micro-trenching and under-cutting effects. To further shrink the NW diameter, digital etching is followed including multiple cycles of self-limited O2 plasma oxidation and diluted HF rinsing. O2 plasma is also utilized for surface passivation in Ge MOScaps to improve the high-k/Ge interface. These NWs form the base of vertical transistors which are simulated by TCAD tools here. The processing techniques proposed in this work provide a viable option for low power vertical Ge and GeSn NW transistors.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef Conference
700 1 _ |a Mertens, K.
|0 P:(DE-Juel1)171699
|b 1
|u fzj
700 1 _ |a Glass, S.
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Mantl, S.
|0 P:(DE-Juel1)128609
|b 3
|u fzj
700 1 _ |a Buca, D.
|0 P:(DE-Juel1)125569
|b 4
|u fzj
700 1 _ |a Zhao, Q. T.
|0 P:(DE-Juel1)128649
|b 5
|u fzj
700 1 _ |a Trellenkamp, S.
|0 P:(DE-Juel1)128856
|b 6
|u fzj
773 _ _ |a 10.1109/ULIS.2018.8354771
856 4 _ |u https://juser.fz-juelich.de/record/859062/files/08354771.pdf
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/859062/files/08354771.pdf?subformat=pdfa
|x pdfa
|y Restricted
909 C O |o oai:juser.fz-juelich.de:859062
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)173033
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)171699
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-HGF)0
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)128609
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)125569
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)128649
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 6
|6 P:(DE-Juel1)128856
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2018
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a contrib
980 _ _ |a VDB
980 _ _ |a contb
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED


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