%0 Conference Paper
%A Buca, D.
%A Schulte-Braucks, C.
%A von den Driesch, N.
%A Tiedemann, Andreas
%A Breuer, Uwe
%A Hartmann, J. M.
%A Zaumseil, P.
%A Mantl, S.
%A Zhao, Q. T.
%T Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors
%I IEEE
%M FZJ-2019-00014
%P 1-4
%D 2018
%< 2018 18th International Workshop on Junction Technology (IWJT) : [Proceedings] - IEEE, 2018. - ISBN 978-1-5386-4511-6978-1-5386-4513-0 - doi:10.1109/IWJT.2018.8330309
%X GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn contents yields high-mobility and decent optical properties; (ii) as a CMOS compatible material, it benefits from the maturity of group IV semiconductor ultra-large scale integration. However the benefit of high carrier mobility in MOSFETs or direct bandgap in tunnel-FETs can only be used in combination with a high quality, scaled and low defective gate oxide and metallic contacts. In this work, we report on (i) the fabrication and characterization of MOS capacitors on high-Sn-content direct bandgap GeSn alloys and (ii) the formation of metallic contacts with low resistivity. We will also briefly discuss the Schottky barrier tuning by dopant segregation during Ni-stano-germanidation.
%B 2018 18th International Workshop on Junction Technology (IWJT)
%C 8 Mar 2018 - 9 Mar 2018, Shanghai (China)
Y2 8 Mar 2018 - 9 Mar 2018
M2 Shanghai, China
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/IWJT.2018.8330309
%U https://juser.fz-juelich.de/record/859063