000859063 001__ 859063
000859063 005__ 20210130000150.0
000859063 0247_ $$2doi$$a10.1109/IWJT.2018.8330309
000859063 037__ $$aFZJ-2019-00014
000859063 1001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b0$$eCorresponding author
000859063 1112_ $$a2018 18th International Workshop on Junction Technology (IWJT)$$cShanghai$$d2018-03-08 - 2018-03-09$$wChina
000859063 245__ $$aGate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors
000859063 260__ $$bIEEE$$c2018
000859063 29510 $$a2018 18th International Workshop on Junction Technology (IWJT) : [Proceedings] - IEEE, 2018. - ISBN 978-1-5386-4511-6978-1-5386-4513-0 - doi:10.1109/IWJT.2018.8330309
000859063 300__ $$a1-4
000859063 3367_ $$2ORCID$$aCONFERENCE_PAPER
000859063 3367_ $$033$$2EndNote$$aConference Paper
000859063 3367_ $$2BibTeX$$aINPROCEEDINGS
000859063 3367_ $$2DRIVER$$aconferenceObject
000859063 3367_ $$2DataCite$$aOutput Types/Conference Paper
000859063 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1547478639_17711
000859063 3367_ $$0PUB:(DE-HGF)7$$2PUB:(DE-HGF)$$aContribution to a book$$mcontb
000859063 520__ $$aGeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn contents yields high-mobility and decent optical properties; (ii) as a CMOS compatible material, it benefits from the maturity of group IV semiconductor ultra-large scale integration. However the benefit of high carrier mobility in MOSFETs or direct bandgap in tunnel-FETs can only be used in combination with a high quality, scaled and low defective gate oxide and metallic contacts. In this work, we report on (i) the fabrication and characterization of MOS capacitors on high-Sn-content direct bandgap GeSn alloys and (ii) the formation of metallic contacts with low resistivity. We will also briefly discuss the Schottky barrier tuning by dopant segregation during Ni-stano-germanidation.
000859063 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000859063 588__ $$aDataset connected to CrossRef Conference
000859063 7001_ $$0P:(DE-HGF)0$$aSchulte-Braucks, C.$$b1
000859063 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b2$$ufzj
000859063 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b3$$ufzj
000859063 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b4$$ufzj
000859063 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b5
000859063 7001_ $$0P:(DE-HGF)0$$aZaumseil, P.$$b6
000859063 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b7$$ufzj
000859063 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b8$$ufzj
000859063 773__ $$a10.1109/IWJT.2018.8330309
000859063 8564_ $$uhttps://juser.fz-juelich.de/record/859063/files/08330309.pdf$$yRestricted
000859063 8564_ $$uhttps://juser.fz-juelich.de/record/859063/files/08330309.pdf?subformat=pdfa$$xpdfa$$yRestricted
000859063 909CO $$ooai:juser.fz-juelich.de:859063$$pVDB
000859063 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b0$$kFZJ
000859063 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b1$$kFZJ
000859063 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b2$$kFZJ
000859063 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128639$$aForschungszentrum Jülich$$b3$$kFZJ
000859063 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133840$$aForschungszentrum Jülich$$b4$$kFZJ
000859063 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich$$b7$$kFZJ
000859063 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b8$$kFZJ
000859063 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000859063 9141_ $$y2018
000859063 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000859063 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000859063 980__ $$acontrib
000859063 980__ $$aVDB
000859063 980__ $$acontb
000859063 980__ $$aI:(DE-Juel1)PGI-9-20110106
000859063 980__ $$aI:(DE-82)080009_20140620
000859063 980__ $$aUNRESTRICTED