TY  - CONF
AU  - Buca, D.
AU  - Schulte-Braucks, C.
AU  - von den Driesch, N.
AU  - Tiedemann, Andreas
AU  - Breuer, Uwe
AU  - Hartmann, J. M.
AU  - Zaumseil, P.
AU  - Mantl, S.
AU  - Zhao, Q. T.
TI  - Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors
PB  - IEEE
M1  - FZJ-2019-00014
SP  - 1-4
PY  - 2018
AB  - GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn contents yields high-mobility and decent optical properties; (ii) as a CMOS compatible material, it benefits from the maturity of group IV semiconductor ultra-large scale integration. However the benefit of high carrier mobility in MOSFETs or direct bandgap in tunnel-FETs can only be used in combination with a high quality, scaled and low defective gate oxide and metallic contacts. In this work, we report on (i) the fabrication and characterization of MOS capacitors on high-Sn-content direct bandgap GeSn alloys and (ii) the formation of metallic contacts with low resistivity. We will also briefly discuss the Schottky barrier tuning by dopant segregation during Ni-stano-germanidation.
T2  - 2018 18th International Workshop on Junction Technology (IWJT)
CY  - 8 Mar 2018 - 9 Mar 2018, Shanghai (China)
Y2  - 8 Mar 2018 - 9 Mar 2018
M2  - Shanghai, China
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/IWJT.2018.8330309
UR  - https://juser.fz-juelich.de/record/859063
ER  -