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@INPROCEEDINGS{Buca:859063,
      author       = {Buca, D. and Schulte-Braucks, C. and von den Driesch, N.
                      and Tiedemann, Andreas and Breuer, Uwe and Hartmann, J. M.
                      and Zaumseil, P. and Mantl, S. and Zhao, Q. T.},
      title        = {{G}ate stack and {N}i({S}i{G}e{S}n) metal contacts
                      formation on low bandgap strained ({S}i){G}e({S}n)
                      semiconductors},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00014},
      pages        = {1-4},
      year         = {2018},
      comment      = {2018 18th International Workshop on Junction Technology
                      (IWJT) : [Proceedings] - IEEE, 2018. - ISBN
                      978-1-5386-4511-6978-1-5386-4513-0 -
                      doi:10.1109/IWJT.2018.8330309},
      booktitle     = {2018 18th International Workshop on
                       Junction Technology (IWJT) :
                       [Proceedings] - IEEE, 2018. - ISBN
                       978-1-5386-4511-6978-1-5386-4513-0 -
                       doi:10.1109/IWJT.2018.8330309},
      abstract     = {GeSn is a promising material to make the most of two worlds
                      [1]: (i) its direct bandgap for high Sn contents yields
                      high-mobility and decent optical properties; (ii) as a CMOS
                      compatible material, it benefits from the maturity of group
                      IV semiconductor ultra-large scale integration. However the
                      benefit of high carrier mobility in MOSFETs or direct
                      bandgap in tunnel-FETs can only be used in combination with
                      a high quality, scaled and low defective gate oxide and
                      metallic contacts. In this work, we report on (i) the
                      fabrication and characterization of MOS capacitors on
                      high-Sn-content direct bandgap GeSn alloys and (ii) the
                      formation of metallic contacts with low resistivity. We will
                      also briefly discuss the Schottky barrier tuning by dopant
                      segregation during Ni-stano-germanidation.},
      month         = {Mar},
      date          = {2018-03-08},
      organization  = {2018 18th International Workshop on
                       Junction Technology (IWJT), Shanghai
                       (China), 8 Mar 2018 - 9 Mar 2018},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/IWJT.2018.8330309},
      url          = {https://juser.fz-juelich.de/record/859063},
}