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| 001 | 859063 | ||
| 005 | 20210130000150.0 | ||
| 024 | 7 | _ | |a 10.1109/IWJT.2018.8330309 |2 doi |
| 037 | _ | _ | |a FZJ-2019-00014 |
| 100 | 1 | _ | |a Buca, D. |0 P:(DE-Juel1)125569 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 2018 18th International Workshop on Junction Technology (IWJT) |c Shanghai |d 2018-03-08 - 2018-03-09 |w China |
| 245 | _ | _ | |a Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors |
| 260 | _ | _ | |c 2018 |b IEEE |
| 295 | 1 | 0 | |a 2018 18th International Workshop on Junction Technology (IWJT) : [Proceedings] - IEEE, 2018. - ISBN 978-1-5386-4511-6978-1-5386-4513-0 - doi:10.1109/IWJT.2018.8330309 |
| 300 | _ | _ | |a 1-4 |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
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| 520 | _ | _ | |a GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn contents yields high-mobility and decent optical properties; (ii) as a CMOS compatible material, it benefits from the maturity of group IV semiconductor ultra-large scale integration. However the benefit of high carrier mobility in MOSFETs or direct bandgap in tunnel-FETs can only be used in combination with a high quality, scaled and low defective gate oxide and metallic contacts. In this work, we report on (i) the fabrication and characterization of MOS capacitors on high-Sn-content direct bandgap GeSn alloys and (ii) the formation of metallic contacts with low resistivity. We will also briefly discuss the Schottky barrier tuning by dopant segregation during Ni-stano-germanidation. |
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| 773 | _ | _ | |a 10.1109/IWJT.2018.8330309 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/859063/files/08330309.pdf |y Restricted |
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