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000859064 1001_ $$0P:(DE-Juel1)164261$$aNarimani, K.$$b0$$eCorresponding author
000859064 245__ $$aSilicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents
000859064 260__ $$aOxford [u.a.]$$bPergamon, Elsevier Science$$c2018
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000859064 520__ $$aIn this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of Ion = 2.55 × 10−7 A/µm at Vds = Von = Vgs − Voff = −0.5 V for an Ioff = 1 nA/µm and an average SS of 55 mV/dec over two orders of magnitude of Id. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency gm/Id beats the MOSFET performance at low currents.
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000859064 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b4$$ufzj
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000859064 773__ $$0PERI:(DE-600)2012825-3$$a10.1016/j.sse.2018.01.007$$gVol. 143, p. 62 - 68$$p62 - 68$$tSolid state electronics$$v143$$x0038-1101$$y2018
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