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@ARTICLE{Narimani:859064,
      author       = {Narimani, K. and Glass, S. and Bernardy, P. and von den
                      Driesch, N. and Zhao, Q. T. and Mantl, S.},
      title        = {{S}ilicon tunnel {FET} with average subthreshold slope of
                      55 m{V}/dec at low drain currents},
      journal      = {Solid state electronics},
      volume       = {143},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2019-00015},
      pages        = {62 - 68},
      year         = {2018},
      abstract     = {In this paper we present a silicon tunnel FET based on
                      line-tunneling to achieve better subthreshold performance.
                      The fabricated device shows an on-current of
                      Ion = 2.55 × 10−7 A/µm at
                      Vds = Von = Vgs − Voff = −0.5 V for an
                      Ioff = 1 nA/µm and an average SS of 55 mV/dec over
                      two orders of magnitude of Id. Furthermore, the analog
                      figures of merit have been calculated and show that the
                      transconductance efficiency gm/Id beats the MOSFET
                      performance at low currents.},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000430550600010},
      doi          = {10.1016/j.sse.2018.01.007},
      url          = {https://juser.fz-juelich.de/record/859064},
}