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@ARTICLE{Saeidi:859065,
      author       = {Saeidi, Ali and Jazaeri, Farzan and Stolichnov, Igor and
                      Luong, Gia Vinh and Mantl, Siegfried and Ionescu, Adrian M},
      collaboration = {Zhao, Qing-Tai},
      title        = {{E}ffect of hysteretic and non-hysteretic negative
                      capacitance on tunnel {FET}s {DC} performance},
      journal      = {Nanotechnology},
      volume       = {29},
      number       = {9},
      issn         = {1361-6528},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2019-00016},
      pages        = {095202 -},
      year         = {2018},
      abstract     = {This work experimentally demonstrates that the negative
                      capacitance effect can be used to significantly improve the
                      key figures of merit of tunnel field effect transistor (FET)
                      switches. In the proposed approach, a matching condition is
                      fulfilled between a trained-polycrystalline PZT capacitor
                      and the tunnel FET (TFET) gate capacitance fabricated on a
                      strained silicon-nanowire technology. We report a
                      non-hysteretic switch configuration by combining a
                      homojunction TFET and a negative capacitance effect booster,
                      suitable for logic applications, for which the on-current is
                      increased by a factor of 100, the transconductance by 2
                      orders of magnitude, and the low swing region is extended.
                      The operation of a hysteretic negative capacitance TFET,
                      when the matching condition for the negative capacitance is
                      fulfilled only in a limited region of operation, is also
                      reported and discussed. In this late case, a limited
                      improvement in the device performance is observed. Overall,
                      the paper demonstrates the main beneficial effects of
                      negative capacitance on TFETs are the overdrive and
                      transconductance amplification, which exactly address the
                      most limiting performances of current TFETs.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29373324},
      UT           = {WOS:000423447900001},
      doi          = {10.1088/1361-6528/aaa590},
      url          = {https://juser.fz-juelich.de/record/859065},
}