%0 Journal Article
%A Vitale, Wolfgang A.
%A Casu, Emanuele A.
%A Biswas, Arnab
%A Rosca, Teodor
%A Alper, Cem
%A Krammer, Anna
%A Luong, Gia V.
%A Zhao, Qing-T.
%A Mantl, Siegfried
%A Schüler, Andreas
%A Ionescu, A. M.
%T A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
%J Scientific reports
%V 7
%N 1
%@ 2045-2322
%C [London]
%I Macmillan Publishers Limited, part of Springer Nature
%M FZJ-2019-00018
%P 355
%D 2017
%X Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:28336970
%U <Go to ISI:>//WOS:000397096800011
%R 10.1038/s41598-017-00359-6
%U https://juser.fz-juelich.de/record/859067