TY  - JOUR
AU  - Vitale, Wolfgang A.
AU  - Casu, Emanuele A.
AU  - Biswas, Arnab
AU  - Rosca, Teodor
AU  - Alper, Cem
AU  - Krammer, Anna
AU  - Luong, Gia V.
AU  - Zhao, Qing-T.
AU  - Mantl, Siegfried
AU  - Schüler, Andreas
AU  - Ionescu, A. M.
TI  - A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
JO  - Scientific reports
VL  - 7
IS  - 1
SN  - 2045-2322
CY  - [London]
PB  - Macmillan Publishers Limited, part of Springer Nature
M1  - FZJ-2019-00018
SP  - 355
PY  - 2017
AB  - Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.
LB  - PUB:(DE-HGF)16
C6  - pmid:28336970
UR  - <Go to ISI:>//WOS:000397096800011
DO  - DOI:10.1038/s41598-017-00359-6
UR  - https://juser.fz-juelich.de/record/859067
ER  -