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@ARTICLE{Vitale:859067,
      author       = {Vitale, Wolfgang A. and Casu, Emanuele A. and Biswas, Arnab
                      and Rosca, Teodor and Alper, Cem and Krammer, Anna and
                      Luong, Gia V. and Zhao, Qing-T. and Mantl, Siegfried and
                      Schüler, Andreas and Ionescu, A. M.},
      title        = {{A} {S}teep-{S}lope {T}ransistor {C}ombining
                      {P}hase-{C}hange and {B}and-to-{B}and-{T}unneling to
                      {A}chieve a sub-{U}nity {B}ody {F}actor},
      journal      = {Scientific reports},
      volume       = {7},
      number       = {1},
      issn         = {2045-2322},
      address      = {[London]},
      publisher    = {Macmillan Publishers Limited, part of Springer Nature},
      reportid     = {FZJ-2019-00018},
      pages        = {355},
      year         = {2017},
      abstract     = {Steep-slope transistors allow to scale down the supply
                      voltage and the energy per computed bit of information as
                      compared to conventional field-effect transistors (FETs),
                      due to their sub-60 mV/decade subthreshold swing at room
                      temperature. Currently pursued approaches to achieve such a
                      subthermionic subthreshold swing consist in alternative
                      carrier injection mechanisms, like quantum mechanical
                      band-to-band tunneling (BTBT) in Tunnel FETs or abrupt
                      phase-change in metal-insulator transition (MIT) devices.
                      The strengths of the BTBT and MIT have been combined in a
                      hybrid device architecture called phase-change tunnel FET
                      (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2)
                      lowers the subthreshold swing of strained-silicon nanowire
                      TFETs. In this work, we demonstrate that the principle
                      underlying the low swing in the PC-TFET relates to a
                      sub-unity body factor achieved by an internal differential
                      gate voltage amplification. We study the effect of
                      temperature on the switching ratio and the swing of the
                      PC-TFET, reporting values as low as 4.0 mV/decade at
                      25 °C, 7.8 mV/decade at 45 °C. We discuss how the
                      unique characteristics of the PC-TFET open new perspectives,
                      beyond FETs and other steep-slope transistors, for low power
                      electronics, analog circuits and neuromorphic computing.},
      cin          = {PGI-9},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:28336970},
      UT           = {WOS:000397096800011},
      doi          = {10.1038/s41598-017-00359-6},
      url          = {https://juser.fz-juelich.de/record/859067},
}