TY  - CONF
AU  - Luong, G. V.
AU  - Strangio, S.
AU  - Tiedemann, Andreas
AU  - Bernardy, P.
AU  - Trellenkamp, S.
AU  - Palestri, P.
AU  - Mantl, S.
AU  - Zhao, Q. T.
TI  - Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM
PB  - IEEE
M1  - FZJ-2019-00021
SP  - 42-45
PY  - 2017
AB  - Half SRAM cells with strained Si nanowire complementary Tunnel-FETs (CTFET) have been fabricated to explore the capability of TFETs for 6T-SRAM. Static measurements on cells with outward faced n-TFET access transistors have been performed to determine the SRAM butterfly curves, allowing the assessment of cell functionality and stability. The forward p-i-n leakage at certain bias configuration of the access transistor may lead to malfunctioning storage operation, even without the contribution of the ambipolar behavior. Lowering the bit-line bias is found to mitigate such effect resulting in functional hold, read and write operation.
T2  - ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)
CY  - 11 Sep 2017 - 14 Sep 2017, Leuven (Belgium)
Y2  - 11 Sep 2017 - 14 Sep 2017
M2  - Leuven, Belgium
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ESSDERC.2017.8066587
UR  - https://juser.fz-juelich.de/record/859070
ER  -