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@INPROCEEDINGS{Luong:859070,
      author       = {Luong, G. V. and Strangio, S. and Tiedemann, Andreas and
                      Bernardy, P. and Trellenkamp, S. and Palestri, P. and Mantl,
                      S. and Zhao, Q. T.},
      title        = {{E}xperimental characterization of the static noise margins
                      of strained silicon complementary tunnel-{FET} {SRAM}},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00021},
      pages        = {42-45},
      year         = {2017},
      comment      = {2017 47th European Solid-State Device Research Conference
                      (ESSDERC) : [Proceedings] - IEEE, 2017. - ISBN
                      978-1-5090-5978-2 - doi:10.1109/ESSDERC.2017.8066587},
      booktitle     = {2017 47th European Solid-State Device
                       Research Conference (ESSDERC) :
                       [Proceedings] - IEEE, 2017. - ISBN
                       978-1-5090-5978-2 -
                       doi:10.1109/ESSDERC.2017.8066587},
      abstract     = {Half SRAM cells with strained Si nanowire complementary
                      Tunnel-FETs (CTFET) have been fabricated to explore the
                      capability of TFETs for 6T-SRAM. Static measurements on
                      cells with outward faced n-TFET access transistors have been
                      performed to determine the SRAM butterfly curves, allowing
                      the assessment of cell functionality and stability. The
                      forward p-i-n leakage at certain bias configuration of the
                      access transistor may lead to malfunctioning storage
                      operation, even without the contribution of the ambipolar
                      behavior. Lowering the bit-line bias is found to mitigate
                      such effect resulting in functional hold, read and write
                      operation.},
      month         = {Sep},
      date          = {2017-09-11},
      organization  = {ESSDERC 2017 - 47th IEEE European
                       Solid-State Device Research Conference
                       (ESSDERC), Leuven (Belgium), 11 Sep
                       2017 - 14 Sep 2017},
      cin          = {PGI-9 / HNF},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)HNF-20170116},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ESSDERC.2017.8066587},
      url          = {https://juser.fz-juelich.de/record/859070},
}