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@ARTICLE{Saeidi:859079,
      author       = {Saeidi, Ali and Jazaeri, Farzan and Bellando, Francesco and
                      Stolichnov, Igor and Luong, Gia V. and Mantl, Siegfried and
                      Enz, Christian C. and Ionescu, Adrian M.},
      collaboration = {Zhao, Qing-Tai},
      title        = {{N}egative {C}apacitance as {P}erformance {B}ooster for
                      {T}unnel {FET}s and {MOSFET}s: {A}n {E}xperimental {S}tudy},
      journal      = {IEEE electron device letters},
      volume       = {38},
      number       = {10},
      issn         = {1558-0563},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00030},
      pages        = {1485 - 1488},
      year         = {2017},
      abstract     = {This letter reports for the first time a full experimental
                      study of performance boosting of tunnel FETs (TFETs) and
                      MOSFETs by negative capacitance (NC) effect. We discuss the
                      importance of capacitance matching between a ferroelectric
                      NC and a device capacitance to achieve hysteretic and
                      non-hysteretic characteristics. PZT ferroelectric capacitors
                      are connected to the gate of three terminals TFETs and
                      MOSFETs and partial or full matching NC conditions for
                      amplification and stability are obtained. First, we
                      demonstrate the characteristics of hysteretic and
                      non-hysteretic NC-TFETs. The main performance boosting is
                      obtained for the non-hysteretic NC-TFET, where the
                      ON-current is increased by a factor of 500 times,
                      transconductance is enhanced by three orders of magnitude,
                      and the low slope region is extended. The boosting of
                      performance is moderate in the hysteretic NC-TFET. Second,
                      we investigate the impact of the same NC booster on MOSFETs.
                      Subthreshold swing as steep as 4 mV/decade with a 1.5-V
                      hysteresis is obtained on a commercial device fabricated in
                      28-nm CMOS technology. Moreover, we demonstrate a
                      non-hysteretic NC-MOSFET with a full matching of
                      capacitances and a reduced subthreshold swing down to 20
                      mV/decade.},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000413760600033},
      doi          = {10.1109/LED.2017.2734943},
      url          = {https://juser.fz-juelich.de/record/859079},
}