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@ARTICLE{Meng:859080,
      author       = {Meng, Xiao-Ran and Ping, Yun-Xia and Yu, Wen-Jie and Xue,
                      Zhong-Ying and Wei, Xing and Zhang, Miao and Di, Zeng-Feng
                      and Zhang, Bo},
      collaboration = {Zhao, Qing-Tai},
      title        = {{I}mpact of {A}l addition on the formation of {N}i
                      germanosilicide layers under different temperature annealing
                      *},
      journal      = {Chinese physics / B B},
      volume       = {26},
      number       = {9},
      issn         = {1674-1056},
      address      = {London},
      publisher    = {Inst. of Physics},
      reportid     = {FZJ-2019-00031},
      pages        = {098503 -},
      year         = {2017},
      abstract     = {Solid reactions between Ni and relaxed Si0.7Ge0.3 substrate
                      were systematically investigated with different Al
                      interlayer thicknesses. The morphology, composition, and
                      micro-structure of the Ni germanosilicide layers were
                      analyzed with different annealing temperatures in the
                      appearance of Al. The germanosilicide layers were
                      characterized by Rutherford backscattering spectrometry,
                      cross-section transmission electron microscopy, scan
                      transmission electron microscopy, and secondary ion mass
                      spectroscopy. It was shown that the incorporation of Al
                      improved the surface and interface morphology of the
                      germanosilicide layers, enhanced the thermal stabilities,
                      and retarded the Ni-rich germanosilicide phase to mono
                      germanosilicide phase. With increasing annealing
                      temperature, Al atoms distributed from the Ni/Si0.7Ge0.3
                      interface to the total layer of Ni2Si0.7Ge0.3, and finally
                      accumulated at the surface of NiSi0.7Ge0.3. We found that
                      under the assistance of Al atoms, the best quality Ni
                      germanosilicide layer was achieved by annealing at 700 °C
                      in the case of 3 nm Al.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000409485800003},
      doi          = {10.1088/1674-1056/26/9/098503},
      url          = {https://juser.fz-juelich.de/record/859080},
}